Abstract
The character of lattice deformation in silicon in implanted with high energy {alpha} particles and protons was studied with a number of X-ray methods. The experiments included double crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter depth distribution proportional to the vacancy-interstitial distribution coming from the Biersack-Ziegler theory. The theoretical rocking curves and density distribution in back-reflection double-crystal and section topography well corresponding to experimental results were calculated using numerical integration of the Takagi-Taupin equations. 9 figs.
Wieteska, K;
[1]
Wierzchowski, W;
[2]
Graeff, W
[3]
- Institute of Atomic Energy, Otwock-Swierk, (Poland)
- Institute of Electronic Materials Technology, Warsaw, (Poland)
- Hasylab at Desy, Hamburg, (Germany)
Citation Formats
Wieteska, K, Wierzchowski, W, and Graeff, W.
X-ray diffraction studies of silicon implanted with high energy ions.
Egypt: N. p.,
1996.
Web.
Wieteska, K, Wierzchowski, W, & Graeff, W.
X-ray diffraction studies of silicon implanted with high energy ions.
Egypt.
Wieteska, K, Wierzchowski, W, and Graeff, W.
1996.
"X-ray diffraction studies of silicon implanted with high energy ions."
Egypt.
@misc{etde_521486,
title = {X-ray diffraction studies of silicon implanted with high energy ions}
author = {Wieteska, K, Wierzchowski, W, and Graeff, W}
abstractNote = {The character of lattice deformation in silicon in implanted with high energy {alpha} particles and protons was studied with a number of X-ray methods. The experiments included double crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter depth distribution proportional to the vacancy-interstitial distribution coming from the Biersack-Ziegler theory. The theoretical rocking curves and density distribution in back-reflection double-crystal and section topography well corresponding to experimental results were calculated using numerical integration of the Takagi-Taupin equations. 9 figs.}
place = {Egypt}
year = {1996}
month = {Dec}
}
title = {X-ray diffraction studies of silicon implanted with high energy ions}
author = {Wieteska, K, Wierzchowski, W, and Graeff, W}
abstractNote = {The character of lattice deformation in silicon in implanted with high energy {alpha} particles and protons was studied with a number of X-ray methods. The experiments included double crystal spectrometer method as well as single crystal section and projection topography realised both with conventional and synchrotron X-ray sources. All observed diffraction patterns were reasonably explainable assuming the lattice parameter depth distribution proportional to the vacancy-interstitial distribution coming from the Biersack-Ziegler theory. The theoretical rocking curves and density distribution in back-reflection double-crystal and section topography well corresponding to experimental results were calculated using numerical integration of the Takagi-Taupin equations. 9 figs.}
place = {Egypt}
year = {1996}
month = {Dec}
}