Abstract
High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.
Dooley, S P;
Jamieson, D N;
Nugent, K W;
Prawer, S
[1]
- Melbourne Univ., Parkville, VIC (Australia). School of Physics
Citation Formats
Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S.
Transverse microanalysis of high energy Ion implants.
Australia: N. p.,
1996.
Web.
Dooley, S P, Jamieson, D N, Nugent, K W, & Prawer, S.
Transverse microanalysis of high energy Ion implants.
Australia.
Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S.
1996.
"Transverse microanalysis of high energy Ion implants."
Australia.
@misc{etde_520692,
title = {Transverse microanalysis of high energy Ion implants}
author = {Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S}
abstractNote = {High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}
title = {Transverse microanalysis of high energy Ion implants}
author = {Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S}
abstractNote = {High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}