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Transverse microanalysis of high energy Ion implants

Abstract

High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.
Authors:
Dooley, S P; Jamieson, D N; Nugent, K W; Prawer, S [1] 
  1. Melbourne Univ., Parkville, VIC (Australia). School of Physics
Publication Date:
Dec 31, 1996
Product Type:
Conference
Report Number:
INIS-AU-0003; CONF-9511295-
Reference Number:
SCA: 665300; PA: AIX-28:058232; EDB-97:123170; SN: 97001842293
Resource Relation:
Conference: 9. Australian conference on nuclear technique of analysis, Newcastle (Australia), 27-29 Nov 1995; Other Information: PBD: [1996]; Related Information: Is Part Of 9th Australian conference on nuclear techniques of analysis. Proceedings; PB: 186 p.
Subject:
66 PHYSICS; DIAMONDS; ION CHANNELING; PROTON CHANNELING; DEPTH; ENERGY SPECTRA; HYDROGEN IONS; HYDROGEN IONS 1 PLUS; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; STOPPING POWER
OSTI ID:
520692
Research Organizations:
Australian Inst. of Nuclear Science and Engineering, Lucas Heights, NSW (Australia)
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97638268; TRN: AU9716180058232
Availability:
INIS; OSTI as DE97638268
Submitting Site:
AUN
Size:
pp. 115-117
Announcement Date:

Citation Formats

Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S. Transverse microanalysis of high energy Ion implants. Australia: N. p., 1996. Web.
Dooley, S P, Jamieson, D N, Nugent, K W, & Prawer, S. Transverse microanalysis of high energy Ion implants. Australia.
Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S. 1996. "Transverse microanalysis of high energy Ion implants." Australia.
@misc{etde_520692,
title = {Transverse microanalysis of high energy Ion implants}
author = {Dooley, S P, Jamieson, D N, Nugent, K W, and Prawer, S}
abstractNote = {High energy ion implants in semiconductor materials have been analyzed by Channeling Contrast Microscopy (CCM) perpendicular to the implant direction, allowing imaging of the entire ion track. The damage produced by Channeled and Random 1.4 MeV H{sup +} implants into the edge of a <100> type IIa diamond wafer were analyzed by channeling into the face of the crystal. The results showed negligible damage in the surface region of the implants, and swelling induced misalignment at the end of range of the implants. Channeled 1.4 MeV H{sup +} implants in diamond had a range only 9% deeper than Random implants, which could be accounted for by dechanneling of the beam. The channeling of H{sup +}{sub 2} ions has been previously found to be identical to that of protons of half energy, however the current experiment has shown a 1% increase in {chi}{sub min} for H{sup +}{sub 2} in diamond compared to H{sup +} at 1,2 MeV per proton. This is due to repulsion between protons within the same channel. 5 refs., 2 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}