Abstract
With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.
Dytlewski, N;
Evans, P J;
Noorman, J T;
[1]
Wielunski, L S;
[2]
Bunder, J
[3]
- Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)
- Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics
- New South Wales Univ., Wollongong, NSW (Australia). Wollongong Univ. Coll
Citation Formats
Dytlewski, N, Evans, P J, Noorman, J T, Wielunski, L S, and Bunder, J.
Heavy ion time-of-flight ERDA of high dose metal implanted germanium.
Australia: N. p.,
1996.
Web.
Dytlewski, N, Evans, P J, Noorman, J T, Wielunski, L S, & Bunder, J.
Heavy ion time-of-flight ERDA of high dose metal implanted germanium.
Australia.
Dytlewski, N, Evans, P J, Noorman, J T, Wielunski, L S, and Bunder, J.
1996.
"Heavy ion time-of-flight ERDA of high dose metal implanted germanium."
Australia.
@misc{etde_520656,
title = {Heavy ion time-of-flight ERDA of high dose metal implanted germanium}
author = {Dytlewski, N, Evans, P J, Noorman, J T, Wielunski, L S, and Bunder, J}
abstractNote = {With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}
title = {Heavy ion time-of-flight ERDA of high dose metal implanted germanium}
author = {Dytlewski, N, Evans, P J, Noorman, J T, Wielunski, L S, and Bunder, J}
abstractNote = {With the thick Ge substrates used in ion implantation, RBS can have difficulty in resolving the mass-depth ambiguities when analysing materials composed of mixtures of elements with nearly equal masses. Additional, and complimentary techniques are thus required. This paper reports the use of heavy ion time-of-flight elastic recoil detection analysis (ToF- ERDA), and conventional RBS in the analysis of Ge(100) implanted with high dose Ti and Cu ions from a MEWA ion source . Heavy ion ToF ERDA has been used to resolve, and profile the implanted transition metal species, and also to study any oxygen incorporation into the sample resulting from the implantation, or subsequential reactions with air or moisture. This work is part of a study on high dose metal ion implantation of medium atomic weight semiconductor materials. 13 refs., 6 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}