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ETDEWEB   /       /    The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs

The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs

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Abstract

The influence of microscopic and macroscopic non-stoichiometry on the Solid-Phase Epitaxial Growth of GaAs has been studied. Ion implantation has been employed to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. In-situ Time Resolved Reflectivity and Transmission Electron Microscopy and ex-situ Rutherford Backscattering Spectroscopy and Channeling have been used to investigate the regrowth of amorphized GaAs layers. As non-stoichiometry shifts from microscopic to macroscopic the interface loses its planar nature and subsequently gets rougher. 7 refs., 3 figs.
Authors:
Belay, K B; Ridgway, M C; Llewellyn, D J [1] 
  1. Australian National Univ., Canberra, ACT (Australia). Dept. of Physics
Publication Date:
Dec 31, 1996
Product Type:
Miscellaneous
Report Number:
INIS-AU-0003; CONF-9511295-
Reference Number:
SCA: 360602; 360106; 360605; PA: AIX-28:056677; EDB-97:118741; SN: 97001841113
Resource Relation:
Conference: 9. Australian conference on nuclear technique of analysis, Newcastle (Australia), 27-29 Nov 1995; Other Information: PBD: [1996]; Related Information: Is Part Of 9th Australian conference on nuclear techniques of analysis. Proceedings; PB: 186 p.
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; ION IMPLANTATION; ORDER-DISORDER TRANSFORMATIONS; AMORPHOUS STATE; ARSENIC 75; CRYSTAL GROWTH; EPITAXY; EXPERIMENTAL DATA; GALLIUM 69; INTERFACES; PHYSICAL RADIATION EFFECTS; REFLECTIVITY; STRUCTURAL CHEMICAL ANALYSIS; TIME DEPENDENCE
OSTI ID:
520467
Research Organizations:
Australian Inst. of Nuclear Science and Engineering, Lucas Heights, NSW (Australia)
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97638268; TRN: AU9716156056677
Availability:
INIS; OSTI as DE97638268
Submitting Site:
AUN
Size:
pp. 44-46
Announcement Date:
Sep 23, 1997

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Citation Formats

Belay, K B, Ridgway, M C, and Llewellyn, D J. The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs. Australia: N. p., 1996. Web.
Belay, K B, Ridgway, M C, & Llewellyn, D J. The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs. Australia.
Belay, K B, Ridgway, M C, and Llewellyn, D J. 1996. "The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs." Australia.
@misc{etde_520467,
title = {The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs}
 author = {Belay, K B, Ridgway, M C, and Llewellyn, D J}
 abstractNote = {The influence of microscopic and macroscopic non-stoichiometry on the Solid-Phase Epitaxial Growth of GaAs has been studied. Ion implantation has been employed to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. In-situ Time Resolved Reflectivity and Transmission Electron Microscopy and ex-situ Rutherford Backscattering Spectroscopy and Channeling have been used to investigate the regrowth of amorphized GaAs layers. As non-stoichiometry shifts from microscopic to macroscopic the interface loses its planar nature and subsequently gets rougher. 7 refs., 3 figs.}
 place = {Australia}
 year = {1996}
 month = {Dec}
 }