Abstract
Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.
Tsoi, K A;
Prawer, S;
Nugent, K W;
Walker, R J;
Weiser, P S
[1]
- Melbourne Univ., Parkville, VIC (Australia). School of Physics
Citation Formats
Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S.
Nanocrystalline diamond in carbon implanted SiO{sub 2}..
Australia: N. p.,
1996.
Web.
Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, & Weiser, P S.
Nanocrystalline diamond in carbon implanted SiO{sub 2}..
Australia.
Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S.
1996.
"Nanocrystalline diamond in carbon implanted SiO{sub 2}."
Australia.
@misc{etde_520465,
title = {Nanocrystalline diamond in carbon implanted SiO{sub 2}.}
author = {Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S}
abstractNote = {Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}
title = {Nanocrystalline diamond in carbon implanted SiO{sub 2}.}
author = {Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S}
abstractNote = {Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}