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Nanocrystalline diamond in carbon implanted SiO{sub 2}.

Abstract

Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.
Authors:
Tsoi, K A; Prawer, S; Nugent, K W; Walker, R J; Weiser, P S [1] 
  1. Melbourne Univ., Parkville, VIC (Australia). School of Physics
Publication Date:
Dec 31, 1996
Product Type:
Miscellaneous
Report Number:
INIS-AU-0003; CONF-9511295-
Reference Number:
SCA: 360206; 360601; PA: AIX-28:056670; EDB-97:118601; SN: 97001841108
Resource Relation:
Conference: 9. Australian conference on nuclear technique of analysis, Newcastle (Australia), 27-29 Nov 1995; Other Information: PBD: [1996]; Related Information: Is Part Of 9th Australian conference on nuclear techniques of analysis. Proceedings; PB: 186 p.
Subject:
36 MATERIALS SCIENCE; DIAMONDS; ION IMPLANTATION; SYNTHESIS; SILICON; CARBON IONS; ANNEALING; DOSE-RESPONSE RELATIONSHIPS; EXPERIMENTAL DATA; GRAPHITE; KEV RANGE 100-1000; ORDER-DISORDER TRANSFORMATIONS; RAMAN SPECTRA; STRUCTURAL CHEMICAL ANALYSIS
OSTI ID:
520465
Research Organizations:
Australian Inst. of Nuclear Science and Engineering, Lucas Heights, NSW (Australia)
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97638268; TRN: AU9716194056670
Availability:
INIS; OSTI as DE97638268
Submitting Site:
AUN
Size:
pp. 155-157
Announcement Date:

Citation Formats

Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S. Nanocrystalline diamond in carbon implanted SiO{sub 2}.. Australia: N. p., 1996. Web.
Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, & Weiser, P S. Nanocrystalline diamond in carbon implanted SiO{sub 2}.. Australia.
Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S. 1996. "Nanocrystalline diamond in carbon implanted SiO{sub 2}." Australia.
@misc{etde_520465,
title = {Nanocrystalline diamond in carbon implanted SiO{sub 2}.}
author = {Tsoi, K A, Prawer, S, Nugent, K W, Walker, R J, and Weiser, P S}
abstractNote = {Recently, it was reported that nanocrystalline diamond can be produced via laser annealing of a high dose C implanted fused quartz (SiO{sub 2}) substrate. The aim of this investigation is to reproduce this result on higher C{sup +} dose samples and the non-implanted silicon sample, as well as optimise the power range and annealing time for the production of these nanocrystals of diamond. In order to provide a wide range of laser powers the samples were annealed using an Ar ion Raman laser. The resulting annealed spots were analysed using scanning electron microscopy (SEM) and Raman analysis. These techniques are employed to determine the type of bonding produced after laser annealing has occurred. 4 refs., 5 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}