Abstract
A copper (100) single crystal has been implanted with gold ions at temperatures ranging from 133 K to 673 K. Rutherford Backscattering Spectroscopy (RBS) has been used to observe the changes in the gold implant distribution that occur as a function of the sample temperature during implantation. Two distinct effects have been observed. Firstly the gold implant distribution, as a function of depth, broadens with sample temperature. This broadening of the gold depth profile is most marked at temperatures above 473 K. Secondly, the gold is implanted deeper into the copper crystal as the sample temperature is increased. These results are discussed in terms of radiation enhanced diffusion and radiation-induced segregation processes. 10 refs., 3 figs.
Citation Formats
Perret, N E, King, B V, and Dastoor, P C.
Radiation-enhanced thermal processes during implantation of gold into copper.
Australia: N. p.,
1996.
Web.
Perret, N E, King, B V, & Dastoor, P C.
Radiation-enhanced thermal processes during implantation of gold into copper.
Australia.
Perret, N E, King, B V, and Dastoor, P C.
1996.
"Radiation-enhanced thermal processes during implantation of gold into copper."
Australia.
@misc{etde_520462,
title = {Radiation-enhanced thermal processes during implantation of gold into copper}
author = {Perret, N E, King, B V, and Dastoor, P C}
abstractNote = {A copper (100) single crystal has been implanted with gold ions at temperatures ranging from 133 K to 673 K. Rutherford Backscattering Spectroscopy (RBS) has been used to observe the changes in the gold implant distribution that occur as a function of the sample temperature during implantation. Two distinct effects have been observed. Firstly the gold implant distribution, as a function of depth, broadens with sample temperature. This broadening of the gold depth profile is most marked at temperatures above 473 K. Secondly, the gold is implanted deeper into the copper crystal as the sample temperature is increased. These results are discussed in terms of radiation enhanced diffusion and radiation-induced segregation processes. 10 refs., 3 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}
title = {Radiation-enhanced thermal processes during implantation of gold into copper}
author = {Perret, N E, King, B V, and Dastoor, P C}
abstractNote = {A copper (100) single crystal has been implanted with gold ions at temperatures ranging from 133 K to 673 K. Rutherford Backscattering Spectroscopy (RBS) has been used to observe the changes in the gold implant distribution that occur as a function of the sample temperature during implantation. Two distinct effects have been observed. Firstly the gold implant distribution, as a function of depth, broadens with sample temperature. This broadening of the gold depth profile is most marked at temperatures above 473 K. Secondly, the gold is implanted deeper into the copper crystal as the sample temperature is increased. These results are discussed in terms of radiation enhanced diffusion and radiation-induced segregation processes. 10 refs., 3 figs.}
place = {Australia}
year = {1996}
month = {Dec}
}