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Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

Abstract

The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.
Publication Date:
Jan 01, 1981
Product Type:
Conference
Report Number:
CONF-801097-
Reference Number:
EDB-82-139542
Resource Relation:
Journal Name: Comm. Eur. Communities, (Rep.) EUR; (Commission of the European Communities <CEC>); Conference: 1980 photovoltaic solar energy conference, Cannes, France, 27 Oct 1980
Subject:
14 SOLAR ENERGY; THERMOPHOTOVOLTAIC CONVERTERS; PERFORMANCE; EFFICIENCY; ELECTRIC CONDUCTIVITY; GERMANIUM; MIRRORS; P-N JUNCTIONS; RECOMBINATION; SOLAR CELLS; DIRECT ENERGY CONVERTERS; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; JUNCTIONS; METALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion
OSTI ID:
5190929
Research Organizations:
Brown Univ, Providence, RI
Country of Origin:
CEC
Language:
English
Other Identifying Numbers:
Journal ID: CODEN: CECED
Submitting Site:
HEDB
Size:
Pages: 911-919
Announcement Date:

Citation Formats

Vera, E S, Loferski, J J, Spitzer, M, and Schewchun, J. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application. CEC: N. p., 1981. Web.
Vera, E S, Loferski, J J, Spitzer, M, & Schewchun, J. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application. CEC.
Vera, E S, Loferski, J J, Spitzer, M, and Schewchun, J. 1981. "Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application." CEC.
@misc{etde_5190929,
title = {Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application}
author = {Vera, E S, Loferski, J J, Spitzer, M, and Schewchun, J}
abstractNote = {The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.}
journal = {Comm. Eur. Communities, (Rep.) EUR; (Commission of the European Communities <CEC>)}
place = {CEC}
year = {1981}
month = {Jan}
}