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High-power semiconductor RSD-based switch

Abstract

The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.
Authors:
Bezuglov, V G; Galakhov, I V; Grusin, I A [1] 
  1. All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others
Publication Date:
Dec 31, 1996
Product Type:
Conference
Report Number:
INIS-CZ-0003; CONF-960610-
Reference Number:
SCA: 700411; PA: AIX-28:056119; EDB-97:114661; SN: 97001835098
Resource Relation:
Conference: BEAMS `96: 11. international conference on high-power particle beams, Prague (Czech Republic), 10-14 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Beams `96. Proceedings of the 11th international conference on high power particle beams. Vol. II; Jungwirth, K.; Ullschmied, J. [eds.]; PB: [692] p.
Subject:
70 PLASMA PHYSICS AND FUSION; ICF DEVICES; SEMICONDUCTOR SWITCHES; DESIGN; CAPACITORS; TESTING
OSTI ID:
511311
Research Organizations:
Ceskoslovenska Akademie Ved, Prague (Czech Republic). Ustav Fyziky Plazmatu
Country of Origin:
Czech Republic
Language:
English
Other Identifying Numbers:
Other: ON: DE97637209; ISBN 80-902250-4-7; TRN: CZ9726887056119
Availability:
INIS; OSTI as DE97637209
Submitting Site:
INIS
Size:
pp. 981-984
Announcement Date:

Citation Formats

Bezuglov, V G, Galakhov, I V, and Grusin, I A. High-power semiconductor RSD-based switch. Czech Republic: N. p., 1996. Web.
Bezuglov, V G, Galakhov, I V, & Grusin, I A. High-power semiconductor RSD-based switch. Czech Republic.
Bezuglov, V G, Galakhov, I V, and Grusin, I A. 1996. "High-power semiconductor RSD-based switch." Czech Republic.
@misc{etde_511311,
title = {High-power semiconductor RSD-based switch}
author = {Bezuglov, V G, Galakhov, I V, and Grusin, I A}
abstractNote = {The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}