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New solid state opening switches for repetitive pulsed power technology

Abstract

In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.
Authors:
Lyubutin, S K; Mesyats, G A; Rukin, S N; Slovikovskii, B G; Turov, A M [1] 
  1. Russian Academy of Sciences, Ekaterinburg (Russian Federation). Inst. of Electrophysics
Publication Date:
Dec 31, 1996
Product Type:
Conference
Report Number:
INIS-CZ-0002; CONF-960610-
Reference Number:
SCA: 700411; PA: AIX-28:056093; EDB-97:114651; SN: 97001835072
Resource Relation:
Conference: BEAMS `96: 11. international conference on high-power particle beams, Prague (Czech Republic), 10-14 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Beams `96. Proceedings of the 11th international conference on high power particle beams. Vol. I; Jungwirth, K.; Ullschmied, J. [eds.]; PB: [684] p.
Subject:
70 PLASMA PHYSICS AND FUSION; HIGH-VOLTAGE PULSE GENERATORS; SEMICONDUCTOR SWITCHES; HZ RANGE; INERTIAL CONFINEMENT; SEMICONDUCTOR DIODES; SOLID-STATE PLASMA
OSTI ID:
511285
Research Organizations:
Ceskoslovenska Akademie Ved, Prague (Czech Republic). Ustav Fyziky Plazmatu
Country of Origin:
Czech Republic
Language:
English
Other Identifying Numbers:
Other: ON: DE97637662; ISBN 80-902250-3-9; TRN: CZ9726701056093
Availability:
INIS; OSTI as DE97637662
Submitting Site:
INIS
Size:
pp. 135-138
Announcement Date:

Citation Formats

Lyubutin, S K, Mesyats, G A, Rukin, S N, Slovikovskii, B G, and Turov, A M. New solid state opening switches for repetitive pulsed power technology. Czech Republic: N. p., 1996. Web.
Lyubutin, S K, Mesyats, G A, Rukin, S N, Slovikovskii, B G, & Turov, A M. New solid state opening switches for repetitive pulsed power technology. Czech Republic.
Lyubutin, S K, Mesyats, G A, Rukin, S N, Slovikovskii, B G, and Turov, A M. 1996. "New solid state opening switches for repetitive pulsed power technology." Czech Republic.
@misc{etde_511285,
title = {New solid state opening switches for repetitive pulsed power technology}
author = {Lyubutin, S K, Mesyats, G A, Rukin, S N, Slovikovskii, B G, and Turov, A M}
abstractNote = {In 1991 the authors discovered a semiconductor opening switch (SOS) effect that occurs in p{sup +}-p-n-n{sup +} silicon structures at a current density of up to 60 kA/cm{sup 2}. This effect was used to develop high-power semiconductor opening switches in intermediate inductive storage circuits. The breaking power of the opening switches was as high as 5 GW, the interrupted current being up to 45 kA, reverse voltage up to 1 MV and the current interruption time between 10 and 60 ns. The opening switches were assembled from quantity-produced Russian-made rectifying diodes type SDL with hard recovery characteristic. On the basis of experimental and theoretical investigations of the SOS effect, new SOS diodes were designed and manufactured by the Electrophysical Institute. The paper gives basic parameters of the SOS diodes. The new diodes offer higher values of interrupted current and shorter times of current interruption together with a considerable increase in the energy switching efficiency. The new SOS diodes were used to develop repetitive all-solid-state pulsed generators with an output voltage of up to 250 kV, pulse repetition rate up to 5 kHz, and pulse duration between 10 and 30 ns. (author). 2 tabs., 3 figs., 4 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}