Abstract
Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.
Cooperstein, G;
Mosher, D;
Stephanakis, S J;
Weber, B V;
Young, F C;
[1]
Swanekamp, S B
[2]
- Naval Research Laboratory, Washington, DC (United States)
- JAYCOR, Vienna, VA (United States)
Citation Formats
Cooperstein, G, Mosher, D, Stephanakis, S J, Weber, B V, Young, F C, and Swanekamp, S B.
Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes.
Czech Republic: N. p.,
1996.
Web.
Cooperstein, G, Mosher, D, Stephanakis, S J, Weber, B V, Young, F C, & Swanekamp, S B.
Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes.
Czech Republic.
Cooperstein, G, Mosher, D, Stephanakis, S J, Weber, B V, Young, F C, and Swanekamp, S B.
1996.
"Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes."
Czech Republic.
@misc{etde_511269,
title = {Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes}
author = {Cooperstein, G, Mosher, D, Stephanakis, S J, Weber, B V, Young, F C, and Swanekamp, S B}
abstractNote = {Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}
title = {Experimental observations of electron-backscatter effects from high-atomic-number anodes in large-aspect-ratio, electron-beam diodes}
author = {Cooperstein, G, Mosher, D, Stephanakis, S J, Weber, B V, Young, F C, and Swanekamp, S B}
abstractNote = {Backscattered electrons from anodes with high-atomic-number substrates cause early-time anode-plasma formation from the surface layer leading to faster, more intense electron beam pinching, and lower diode impedance. A simple derivation of Child-Langmuir current from a thin hollow cathode shows the same dependence on the diode aspect ratio as critical current. Using this fact, it is shown that the diode voltage and current follow relativistic Child-Langmuir theory until the anode plasma is formed, and then follows critical current after the beam pinches. With thin hollow cathodes, electron beam pinching can be suppressed at low voltages (< 800 kV) even for high currents and high-atomic-number anodes. Electron beam pinching can also be suppressed at high voltages for low-atomic-number anodes as long as the electron current densities remain below the plasma turn-on threshold. (author). 8 figs., 2 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}