Abstract
In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.
Mosher, D;
Cooperstein, G;
[1]
Rose, D V;
Swanekamp, S B
[2]
- Naval Research Laboratory, Washington, DC (United States)
- JAYCOR, Vienna, VA (United States)
Citation Formats
Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B.
Modification of diode characteristics by electron back-scatter from high-atomic-number anodes.
Czech Republic: N. p.,
1996.
Web.
Mosher, D, Cooperstein, G, Rose, D V, & Swanekamp, S B.
Modification of diode characteristics by electron back-scatter from high-atomic-number anodes.
Czech Republic.
Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B.
1996.
"Modification of diode characteristics by electron back-scatter from high-atomic-number anodes."
Czech Republic.
@misc{etde_511268,
title = {Modification of diode characteristics by electron back-scatter from high-atomic-number anodes}
author = {Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B}
abstractNote = {In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}
title = {Modification of diode characteristics by electron back-scatter from high-atomic-number anodes}
author = {Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B}
abstractNote = {In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}