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Modification of diode characteristics by electron back-scatter from high-atomic-number anodes

Abstract

In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.
Authors:
Mosher, D; Cooperstein, G; [1]  Rose, D V; Swanekamp, S B [2] 
  1. Naval Research Laboratory, Washington, DC (United States)
  2. JAYCOR, Vienna, VA (United States)
Publication Date:
Dec 31, 1996
Product Type:
Conference
Report Number:
INIS-CZ-0003; CONF-960610-
Reference Number:
SCA: 700390; PA: AIX-28:056072; EDB-97:114572; SN: 97001835052
Resource Relation:
Conference: BEAMS `96: 11. international conference on high-power particle beams, Prague (Czech Republic), 10-14 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Beams `96. Proceedings of the 11th international conference on high power particle beams. Vol. II; Jungwirth, K.; Ullschmied, J. [eds.]; PB: [692] p.
Subject:
70 PLASMA PHYSICS AND FUSION; DIODE TUBES; ELECTRON BEAMS; ANODES; BACKSCATTERING; BEAM PRODUCTION; COMPUTERIZED SIMULATION; DISTRIBUTION FUNCTIONS; ELECTRONS; ENERGY SPECTRA; MEV RANGE 10-100; ONE-DIMENSIONAL CALCULATIONS; PINCH EFFECT; POISSON EQUATION; TANTALUM
OSTI ID:
511268
Research Organizations:
Ceskoslovenska Akademie Ved, Prague (Czech Republic). Ustav Fyziky Plazmatu
Country of Origin:
Czech Republic
Language:
English
Other Identifying Numbers:
Other: ON: DE97637209; TRN: CZ9726924056072
Availability:
INIS; OSTI as DE97637209
Submitting Site:
INIS
Size:
pp. 1147-1150
Announcement Date:
Sep 04, 1997

Citation Formats

Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B. Modification of diode characteristics by electron back-scatter from high-atomic-number anodes. Czech Republic: N. p., 1996. Web.
Mosher, D, Cooperstein, G, Rose, D V, & Swanekamp, S B. Modification of diode characteristics by electron back-scatter from high-atomic-number anodes. Czech Republic.
Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B. 1996. "Modification of diode characteristics by electron back-scatter from high-atomic-number anodes." Czech Republic.
@misc{etde_511268,
title = {Modification of diode characteristics by electron back-scatter from high-atomic-number anodes}
author = {Mosher, D, Cooperstein, G, Rose, D V, and Swanekamp, S B}
abstractNote = {In high-power vacuum diodes with high-atomic-number anodes, back-scattered electrons alter the vacuum space charge and resulting electron and ion currents. Electron multiple back-scattering was studied through equilibrium solutions of the Poisson equation for 1-dimensional, bipolar diodes in order to predict their early-time behavior. Before ion turn-on, back-scattered electrons from high-Z anodes suppress the diode current by about 10%. After ion turn-on in the same diodes, electron back-scatter leads to substantial enhancements of both the electron and ion currents above the Child-Langmuir values. Current enhancements with ion flow from low-Z anodes are small. (author). 5 figs., 7 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}