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The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals

Abstract

A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.
Authors:
Remnev, G E; Zakoutaev, A N; Grushin, I I; Matvenko, V M; Potemkin, A V; Ryzhkov, V A; [1]  Ivanov, Yu F; [2]  Chernikov, E V [3] 
  1. Tomsk Polytechnic Univ. (Russian Federation). Nuclear Physics Inst.
  2. Construction Academy, Tomsk (Russian Federation)
  3. Siberian Physical Technical Institute, Tomsk (Russian Federation)
Publication Date:
Dec 31, 1996
Product Type:
Conference
Report Number:
INIS-CZ-0003; CONF-960610-
Reference Number:
SCA: 070205; 400101; PA: AIX-28:055176; EDB-97:110394; SN: 97001834366
Resource Relation:
Conference: BEAMS `96: 11. international conference on high-power particle beams, Prague (Czech Republic), 10-14 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Beams `96. Proceedings of the 11th international conference on high power particle beams. Vol. II; Jungwirth, K.; Ullschmied, J. [eds.]; PB: [692] p.
Subject:
07 ISOTOPE AND RADIATION SOURCE TECHNOLOGY; 40 CHEMISTRY; THIN FILMS; DEPOSITION; ABLATION; COPPER; IMPURITIES; ION BEAMS; KEV RANGE 100-1000; KILO AMP BEAM CURRENTS; MASS SPECTROSCOPY; PLASMA PRODUCTION; PULSED IRRADIATION; TUNGSTEN; X-RAY FLUORESCENCE ANALYSIS
OSTI ID:
510880
Research Organizations:
Ceskoslovenska Akademie Ved, Prague (Czech Republic). Ustav Fyziky Plazmatu
Country of Origin:
Czech Republic
Language:
English
Other Identifying Numbers:
Other: ON: DE97637209; ISBN 80-902250-4-7; TRN: CZ9726868055176
Availability:
INIS; OSTI as DE97637209
Submitting Site:
INIS
Size:
pp. 873-877
Announcement Date:

Citation Formats

Remnev, G E, Zakoutaev, A N, Grushin, I I, Matvenko, V M, Potemkin, A V, Ryzhkov, V A, Ivanov, Yu F, and Chernikov, E V. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals. Czech Republic: N. p., 1996. Web.
Remnev, G E, Zakoutaev, A N, Grushin, I I, Matvenko, V M, Potemkin, A V, Ryzhkov, V A, Ivanov, Yu F, & Chernikov, E V. The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals. Czech Republic.
Remnev, G E, Zakoutaev, A N, Grushin, I I, Matvenko, V M, Potemkin, A V, Ryzhkov, V A, Ivanov, Yu F, and Chernikov, E V. 1996. "The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals." Czech Republic.
@misc{etde_510880,
title = {The deposition of thin metal films at the high-intensity pulsed-ion-beam influence on the metals}
author = {Remnev, G E, Zakoutaev, A N, Grushin, I I, Matvenko, V M, Potemkin, A V, Ryzhkov, V A, Ivanov, Yu F, and Chernikov, E V}
abstractNote = {A high-intensity pulsed ion beam with parameters: ion energy 350-500 keV, ion current density at a target > 200 A/cm{sup 2}, pulse duration 60 ns, was used for metal deposition. The film deposition rate was 0.6-4.0 mm/s. Transmission electron microscopy/transmission electron diffraction investigations of the copper target-film system were performed. The impurity content in the film was determined by x-ray fluorescence analysis and secondary ion mass spectrometry. The angular distributions of the ablated plasma were measured. (author). 2 figs., 7 refs.}
place = {Czech Republic}
year = {1996}
month = {Dec}
}