Abstract
This paper describes laser irradiation and velocity selective deposition experiments for fabricating high quality thin films. For the formation of Ag thin film by vacuum deposition method, YAG laser was irradiated to atoms or clusters parallel or perpendicular to the NaCl single crystal substrate, to deposit them on the substrate. For another experiment, Ag atoms selected in the given velocity were deposited on the (001) NaCl substrate by passing the molecular beam through the velocity selector. When laser was not irradiated, the thin film showed a random structure. Epitaxial growth was accelerated by the laser irradiation. When the selective velocity was set in 353 m/s at the constant intensity of molecular beam, the diffraction pattern of the thin film showed net pattern. When the selective velocity was set in 529 m/s, a structure in which ring pattern was overlapped on the net pattern was obtained. 2 figs.
Hijikata, K;
Inoue, T;
Nagasaki, T;
Suzuki, Y;
Sato, I;
[1]
Nakabeppu, O
[2]
- Tokyo Institute of Technology, Tokyo (Japan)
- The University of Tokyo, Tokyo (Japan). Faculty of Engineering
Citation Formats
Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O.
Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo.
Japan: N. p.,
1997.
Web.
Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, & Nakabeppu, O.
Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo.
Japan.
Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O.
1997.
"Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo."
Japan.
@misc{etde_510511,
title = {Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo}
author = {Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O}
abstractNote = {This paper describes laser irradiation and velocity selective deposition experiments for fabricating high quality thin films. For the formation of Ag thin film by vacuum deposition method, YAG laser was irradiated to atoms or clusters parallel or perpendicular to the NaCl single crystal substrate, to deposit them on the substrate. For another experiment, Ag atoms selected in the given velocity were deposited on the (001) NaCl substrate by passing the molecular beam through the velocity selector. When laser was not irradiated, the thin film showed a random structure. Epitaxial growth was accelerated by the laser irradiation. When the selective velocity was set in 353 m/s at the constant intensity of molecular beam, the diffraction pattern of the thin film showed net pattern. When the selective velocity was set in 529 m/s, a structure in which ring pattern was overlapped on the net pattern was obtained. 2 figs.}
place = {Japan}
year = {1997}
month = {Feb}
}
title = {Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo}
author = {Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O}
abstractNote = {This paper describes laser irradiation and velocity selective deposition experiments for fabricating high quality thin films. For the formation of Ag thin film by vacuum deposition method, YAG laser was irradiated to atoms or clusters parallel or perpendicular to the NaCl single crystal substrate, to deposit them on the substrate. For another experiment, Ag atoms selected in the given velocity were deposited on the (001) NaCl substrate by passing the molecular beam through the velocity selector. When laser was not irradiated, the thin film showed a random structure. Epitaxial growth was accelerated by the laser irradiation. When the selective velocity was set in 353 m/s at the constant intensity of molecular beam, the diffraction pattern of the thin film showed net pattern. When the selective velocity was set in 529 m/s, a structure in which ring pattern was overlapped on the net pattern was obtained. 2 figs.}
place = {Japan}
year = {1997}
month = {Feb}
}