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Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo

Abstract

This paper describes laser irradiation and velocity selective deposition experiments for fabricating high quality thin films. For the formation of Ag thin film by vacuum deposition method, YAG laser was irradiated to atoms or clusters parallel or perpendicular to the NaCl single crystal substrate, to deposit them on the substrate. For another experiment, Ag atoms selected in the given velocity were deposited on the (001) NaCl substrate by passing the molecular beam through the velocity selector. When laser was not irradiated, the thin film showed a random structure. Epitaxial growth was accelerated by the laser irradiation. When the selective velocity was set in 353 m/s at the constant intensity of molecular beam, the diffraction pattern of the thin film showed net pattern. When the selective velocity was set in 529 m/s, a structure in which ring pattern was overlapped on the net pattern was obtained. 2 figs.
Authors:
Hijikata, K; Inoue, T; Nagasaki, T; Suzuki, Y; Sato, I; [1]  Nakabeppu, O [2] 
  1. Tokyo Institute of Technology, Tokyo (Japan)
  2. The University of Tokyo, Tokyo (Japan). Faculty of Engineering
Publication Date:
Feb 01, 1997
Product Type:
Conference
Report Number:
CONF-970283-
Reference Number:
SCA: 300400; PA: NEDO-97:820056; EDB-97:111410; SN: 97001833137
Resource Relation:
Conference: Report meeting for the results of `the publicly applied proposal type and hi-tech (emphasized) field research and development in fiscal 1995`, 1995 nendo teian kobogata saisentan (juten) bun`ya kenkyu kaihatsu seika hokokukai, Tokyo (Japan), 12-14 Feb 1997; Other Information: PBD: Feb 1997; Related Information: Is Part Of Preprint of the results of `the publicly applied proposal type and hi-tech (emphasized) field research and development in fiscal 1995`; PB: 469 p.; `1995 nendo teian kobogata saisentan (juten) bun`ya kenkyu kaihatsu` seika hokokukai yokoshu
Subject:
30 DIRECT ENERGY CONVERSION; THERMOELECTRIC MATERIALS; THIN FILMS; LASERS; ENERGY CONVERSION; ALUMINIUM OXIDES; FERRITE GARNETS; YTTRIUM COMPOUNDS; EPITAXY; CRYSTAL GROWTH; PHYSICAL VAPOR DEPOSITION; CLUSTER BEAM INJECTION; SODIUM CHLORIDES; MONOCRYSTALS; BISMUTH; TELLURIUM; CRYSTAL STRUCTURE; THERMOELECTRIC PROPERTIES
OSTI ID:
510511
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97757283; TRN: 97:820056
Availability:
Available from New Energy and Industrial Technology Development Organization, Sunshine 60, 30F 1-1, 3-chome, Higashi-Ikebukuro, Toshima-ku, Tokyo, Japan; OSTI as DE97757283
Submitting Site:
NEDO
Size:
pp. 434-435
Announcement Date:
Sep 02, 1997

Citation Formats

Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O. Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo. Japan: N. p., 1997. Web.
Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, & Nakabeppu, O. Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo. Japan.
Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O. 1997. "Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo." Japan.
@misc{etde_510511,
title = {Development of new technologies for high quality thin film and its application to energy engineering; Hikari seigyo to sokudo senbetsu ni yoru chokinshitsu usumaku no seisaku to energy bun`ya eno tekiyo}
author = {Hijikata, K, Inoue, T, Nagasaki, T, Suzuki, Y, Sato, I, and Nakabeppu, O}
abstractNote = {This paper describes laser irradiation and velocity selective deposition experiments for fabricating high quality thin films. For the formation of Ag thin film by vacuum deposition method, YAG laser was irradiated to atoms or clusters parallel or perpendicular to the NaCl single crystal substrate, to deposit them on the substrate. For another experiment, Ag atoms selected in the given velocity were deposited on the (001) NaCl substrate by passing the molecular beam through the velocity selector. When laser was not irradiated, the thin film showed a random structure. Epitaxial growth was accelerated by the laser irradiation. When the selective velocity was set in 353 m/s at the constant intensity of molecular beam, the diffraction pattern of the thin film showed net pattern. When the selective velocity was set in 529 m/s, a structure in which ring pattern was overlapped on the net pattern was obtained. 2 figs.}
place = {Japan}
year = {1997}
month = {Feb}
}