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Photo-switching element

Patent:

Abstract

Photo-input MOS transistor (Photo-switching element) cannot give enough ON/OFF ratio but requires an auxiliary condenser for a certain type of application. In addition, PN junction of amorphous silicon is not practical because it gives high leak current resulting in low electromotive force. In this invention, a solar cell was constructed with a lower electrode consisting of a transparent electro-conducting film, a photosensitive part consisting of an amorphous Si layer of p-i-n layer construction, and an upper metal electrode consisting of Cr or Nichrome, and a thin film transistor was placed on the solar cell, and further the upper metal electrode was co-used as a gate electrode of the thin film transistor; this set-up of this invention enabled to attain an efficient photo-electric conversion of the incident light, high electromotive force of the solar cell, and the transistor with high ON/OFF ratio. (3 figs)
Authors:
Publication Date:
Oct 31, 1987
Product Type:
Patent
Report Number:
JP 62-250676
Reference Number:
NEDO-87-960183; EDB-88-099413
Resource Relation:
Patent File Date: Filed date 23 Apr 1986
Subject:
14 SOLAR ENERGY; DIELECTRIC MATERIALS; SUBSTRATES; OPACITY; SEMICONDUCTOR SWITCHES; THIN FILMS; ELECTRODES; TRANSISTORS; AMORPHOUS STATE; SILICON SOLAR CELLS; DIRECT ENERGY CONVERTERS; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; MATERIALS; OPTICAL PROPERTIES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SOLAR CELLS; SOLAR EQUIPMENT; SWITCHES; 140501* - Solar Energy Conversion- Photovoltaic Conversion
OSTI ID:
5069510
Country of Origin:
Japan
Language:
Japanese
Submitting Site:
NEDO
Size:
Pages: 4
Announcement Date:

Patent:

Citation Formats

Masaki, Yuichi. Photo-switching element. Japan: N. p., 1987. Web.
Masaki, Yuichi. Photo-switching element. Japan.
Masaki, Yuichi. 1987. "Photo-switching element." Japan.
@misc{etde_5069510,
title = {Photo-switching element}
author = {Masaki, Yuichi}
abstractNote = {Photo-input MOS transistor (Photo-switching element) cannot give enough ON/OFF ratio but requires an auxiliary condenser for a certain type of application. In addition, PN junction of amorphous silicon is not practical because it gives high leak current resulting in low electromotive force. In this invention, a solar cell was constructed with a lower electrode consisting of a transparent electro-conducting film, a photosensitive part consisting of an amorphous Si layer of p-i-n layer construction, and an upper metal electrode consisting of Cr or Nichrome, and a thin film transistor was placed on the solar cell, and further the upper metal electrode was co-used as a gate electrode of the thin film transistor; this set-up of this invention enabled to attain an efficient photo-electric conversion of the incident light, high electromotive force of the solar cell, and the transistor with high ON/OFF ratio. (3 figs)}
place = {Japan}
year = {1987}
month = {Oct}
}