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Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas

Abstract

Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl{sub 4}), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl{sub 4} in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author).
Authors:
Publication Date:
Dec 31, 1996
Product Type:
Thesis/Dissertation
Report Number:
INIS-MX-007
Reference Number:
SCA: 360102; 665100; PA: AIX-28:035927; EDB-97:079957; NTS-97:012652; SN: 97001795214
Resource Relation:
Other Information: TH: Thesis (Physicist).; PBD: 1996
Subject:
36 MATERIALS SCIENCE; 66 PHYSICS; ELECTRON CYCLOTRON-RESONANCE; HYDROGENATION; SILICON; AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION; HIGH-FREQUENCY DISCHARGES; RUTHERFORD SCATTERING; SILICON ALLOYS; SPUTTERING; THIN FILMS
OSTI ID:
480395
Research Organizations:
Universidad Autonoma del Estado de Mexico, Toluca (Mexico)
Country of Origin:
Mexico
Language:
Spanish
Other Identifying Numbers:
Other: ON: DE97624274; TRN: MX9700033035927
Availability:
INIS; OSTI as DE97624274
Submitting Site:
INIS
Size:
97 p.
Announcement Date:

Citation Formats

Mejia H, J A. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas. Mexico: N. p., 1996. Web.
Mejia H, J A. Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas. Mexico.
Mejia H, J A. 1996. "Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas." Mexico.
@misc{etde_480395,
title = {Properties of hydrogenated amorphous silicon (a-Si:H) deposited using a microwave Ecr plasma; Propiedades del a-Si:H depositado utilizando un plasma de microondas}
author = {Mejia H, J A}
abstractNote = {Hydrogenated amorphous silicon (a-Si:H) films have been widely applied to semiconductor devices, such as thin film transistors, solar cells and photosensitive devices. In this work, the first Si-H-Cl alloys (obtained at the National Institute for Nuclear Research of Mexico) were formed by a microwave electron cyclotron resonance (Ecr) plasma CVD method. Gaseous mixtures of silicon tetrachloride (Si Cl{sub 4}), hydrogen and argon were used. The Ecr plasma was generated by microwaves at 2.45 GHz and a magnetic field of 670 G was applied to maintain the discharge after resonance condition (occurring at 875 G). Si and Cl contents were analyzed by Rutherford Backscattering Spectrometry (RBS). It was found that, increasing proportion of Si Cl{sub 4} in the mixture or decreasing pressure, the silicon and chlorine percentages decrease. Optical gaps were obtained by spectrophotometry. Decreasing temperature, optical gap values increase from 1.4 to 1.5 eV. (Author).}
place = {Mexico}
year = {1996}
month = {Dec}
}