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Thin film characterization by resonantly excited internal standing waves

Abstract

This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.
Authors:
Di Fonzio, S [1] 
  1. SINCROTRONE TRIESTE, Trieste (Italy)
Publication Date:
Sep 01, 1996
Product Type:
Conference
Report Number:
LNF-IR-96/049; CONF-9610291-
Reference Number:
SCA: 665300; PA: ITA-97:000433; EDB-97:064264; SN: 97001773823
Resource Relation:
Conference: 5. school on X-ray diffraction from polycrystalline materials, Frascati (Italy), 2-5 Oct 1996; Other Information: PBD: Sep 1996; Related Information: Is Part Of Thin film characterisation by advanced X-ray diffraction techniques; Cappuccio, G.; Terranova, M.L. [eds.] [INFN, Laboratori Nazionali di Frascati, Rome (Italy)]; PB: 388 p.
Subject:
66 PHYSICS; X-RAY FLUORESCENCE ANALYSIS; THIN FILMS; STANDING WAVES; NONDESTRUCTIVE ANALYSIS; PHYSICAL PROPERTIES
OSTI ID:
465299
Research Organizations:
Istituto Nazionale di Fisica Nucleare, Frascati (Italy). Lab. Nazionale di Frascati
Country of Origin:
Italy
Language:
English
Other Identifying Numbers:
Other: ON: DE97740684; TRN: IT9700433
Availability:
OSTI as DE97740684
Submitting Site:
ITA
Size:
pp. 335-356
Announcement Date:

Citation Formats

Di Fonzio, S. Thin film characterization by resonantly excited internal standing waves. Italy: N. p., 1996. Web.
Di Fonzio, S. Thin film characterization by resonantly excited internal standing waves. Italy.
Di Fonzio, S. 1996. "Thin film characterization by resonantly excited internal standing waves." Italy.
@misc{etde_465299,
title = {Thin film characterization by resonantly excited internal standing waves}
author = {Di Fonzio, S}
abstractNote = {This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.}
place = {Italy}
year = {1996}
month = {Sep}
}