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XRSW method, its application and development

Abstract

X-Ray Standing Waves (XRSW) may be obtained under dynamical diffraction in periodic structures or under total external reflection conditions (TR) is stratified medium. As the incident angle varies, XRSW nodes and antinodes move in the direction perpendicular to the reflecting planes, leading to drastic variation of photoelectron interaction of X-ray with matter and resulting in specific angular dependencies of secondary radiation yields (photoelectrons, fluorescence, internal photoeffect, photoluminescence, Compton and thermal diffuse scattering). The structural information - the position of investigated atoms in the direction of XRSW movement (coherent position), the distribution of atoms about this position (coherent fraction) - is obtained with the accuracy about several percents from XRSW period D. The objects under investigation are: semiconductor surface layers, heterostructure, multicomponent crystals, interfaces, adsorbed layers. Besides the development of XRSW method allow to obtain structure, geometrical and optical parameters of ultrathin films (crystalline and disordered, organic and inorganic) and nanostructures on their base.
Authors:
Zheludeva, S I; Kovalchuk, M V [1] 
  1. Russian Academy of Sciences, Institute of Crystallography, Moscow (Russian Federation)
Publication Date:
Sep 01, 1996
Product Type:
Conference
Report Number:
LNF-IR-96/049; CONF-9610291-
Reference Number:
SCA: 665300; PA: ITA-97:000431; EDB-97:064297; SN: 97001773819
Resource Relation:
Conference: 5. school on X-ray diffraction from polycrystalline materials, Frascati (Italy), 2-5 Oct 1996; Other Information: PBD: Sep 1996; Related Information: Is Part Of Thin film characterisation by advanced X-ray diffraction techniques; Cappuccio, G.; Terranova, M.L. [eds.] [INFN, Laboratori Nazionali di Frascati, Rome (Italy)]; PB: 388 p.
Subject:
66 PHYSICS; X-RAY SOURCES; STANDING WAVES; ELECTROMAGNETIC RADIATION; REFLECTION; BRAGG REFLECTION; NONDESTRUCTIVE ANALYSIS
OSTI ID:
465297
Research Organizations:
Istituto Nazionale di Fisica Nucleare, Frascati (Italy). Lab. Nazionale di Frascati
Country of Origin:
Italy
Language:
English
Other Identifying Numbers:
Other: ON: DE97740684; TRN: IT9700431
Availability:
OSTI as DE97740684
Submitting Site:
ITA
Size:
pp. 289-319
Announcement Date:

Citation Formats

Zheludeva, S I, and Kovalchuk, M V. XRSW method, its application and development. Italy: N. p., 1996. Web.
Zheludeva, S I, & Kovalchuk, M V. XRSW method, its application and development. Italy.
Zheludeva, S I, and Kovalchuk, M V. 1996. "XRSW method, its application and development." Italy.
@misc{etde_465297,
title = {XRSW method, its application and development}
author = {Zheludeva, S I, and Kovalchuk, M V}
abstractNote = {X-Ray Standing Waves (XRSW) may be obtained under dynamical diffraction in periodic structures or under total external reflection conditions (TR) is stratified medium. As the incident angle varies, XRSW nodes and antinodes move in the direction perpendicular to the reflecting planes, leading to drastic variation of photoelectron interaction of X-ray with matter and resulting in specific angular dependencies of secondary radiation yields (photoelectrons, fluorescence, internal photoeffect, photoluminescence, Compton and thermal diffuse scattering). The structural information - the position of investigated atoms in the direction of XRSW movement (coherent position), the distribution of atoms about this position (coherent fraction) - is obtained with the accuracy about several percents from XRSW period D. The objects under investigation are: semiconductor surface layers, heterostructure, multicomponent crystals, interfaces, adsorbed layers. Besides the development of XRSW method allow to obtain structure, geometrical and optical parameters of ultrathin films (crystalline and disordered, organic and inorganic) and nanostructures on their base.}
place = {Italy}
year = {1996}
month = {Sep}
}