Abstract
In this thesis, we argue in favour of photoemission as an in-situ characterization tool for the homo-epitaxial growth of GaAs. The first part, is concerned with the interpretation of the origin of the photoemission oscillations as first observed by J.N. Eckstein and al during MBE growth of GaAs. To study this effect, two approaches have been used. These approaches are based on reaction surface and roughness observations to study the growth mode. They associate the photoemission current with the presence of uncovered gallium adatoms, i.e. those which do not have an arsenic atom above them. The first approach is based on chemical rate theory, whereas the second is based on an atomistic simulation of GaAs homo-epitaxy. This last approach introduces the notion of interlayer migration processes and uses a Monte Carlo technique to look at the temporal evolution of the configuration and hence the morphology. It is shown with these two approaches that the photoemission current has similar characteristics as to those of RHEED, c.g.the same oscillation period. The results obtained have shown the relationship between the photoemission oscillations amplitude and the growth mode which are determined by the mechanisms of absorption and diffusion of gallium atoms and arsenic atoms
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Citation Formats
Fazouan, N.
Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission.
France: N. p.,
1994.
Web.
Fazouan, N.
Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission.
France.
Fazouan, N.
1994.
"Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission."
France.
@misc{etde_455149,
title = {Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission}
author = {Fazouan, N}
abstractNote = {In this thesis, we argue in favour of photoemission as an in-situ characterization tool for the homo-epitaxial growth of GaAs. The first part, is concerned with the interpretation of the origin of the photoemission oscillations as first observed by J.N. Eckstein and al during MBE growth of GaAs. To study this effect, two approaches have been used. These approaches are based on reaction surface and roughness observations to study the growth mode. They associate the photoemission current with the presence of uncovered gallium adatoms, i.e. those which do not have an arsenic atom above them. The first approach is based on chemical rate theory, whereas the second is based on an atomistic simulation of GaAs homo-epitaxy. This last approach introduces the notion of interlayer migration processes and uses a Monte Carlo technique to look at the temporal evolution of the configuration and hence the morphology. It is shown with these two approaches that the photoemission current has similar characteristics as to those of RHEED, c.g.the same oscillation period. The results obtained have shown the relationship between the photoemission oscillations amplitude and the growth mode which are determined by the mechanisms of absorption and diffusion of gallium atoms and arsenic atoms of molecules. Finally, the study of the effect of the surface reactions shows the importance of these in the case where arsenic is supplied in molecular form (As{sub 2}). The last part concerns the experimental measurements at the threshold photoemission current during epitaxial growth of GaAs by metal-organic vapour phase epitaxy (MOVPE). The objective of this experimental study is to test the good running of the photo-assisted MOVPE low pressure system and to study the possibilities offered by this as an in-situ diagnostic tool for MOVPE. (author). 101 refs., 80 figs., 6 tabs.}
place = {France}
year = {1994}
month = {May}
}
title = {Simulation and characterization of the crystal growth by photoemission; Simulation et caracterisation de la croissance cristalline par photoemission}
author = {Fazouan, N}
abstractNote = {In this thesis, we argue in favour of photoemission as an in-situ characterization tool for the homo-epitaxial growth of GaAs. The first part, is concerned with the interpretation of the origin of the photoemission oscillations as first observed by J.N. Eckstein and al during MBE growth of GaAs. To study this effect, two approaches have been used. These approaches are based on reaction surface and roughness observations to study the growth mode. They associate the photoemission current with the presence of uncovered gallium adatoms, i.e. those which do not have an arsenic atom above them. The first approach is based on chemical rate theory, whereas the second is based on an atomistic simulation of GaAs homo-epitaxy. This last approach introduces the notion of interlayer migration processes and uses a Monte Carlo technique to look at the temporal evolution of the configuration and hence the morphology. It is shown with these two approaches that the photoemission current has similar characteristics as to those of RHEED, c.g.the same oscillation period. The results obtained have shown the relationship between the photoemission oscillations amplitude and the growth mode which are determined by the mechanisms of absorption and diffusion of gallium atoms and arsenic atoms of molecules. Finally, the study of the effect of the surface reactions shows the importance of these in the case where arsenic is supplied in molecular form (As{sub 2}). The last part concerns the experimental measurements at the threshold photoemission current during epitaxial growth of GaAs by metal-organic vapour phase epitaxy (MOVPE). The objective of this experimental study is to test the good running of the photo-assisted MOVPE low pressure system and to study the possibilities offered by this as an in-situ diagnostic tool for MOVPE. (author). 101 refs., 80 figs., 6 tabs.}
place = {France}
year = {1994}
month = {May}
}