Abstract
The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.
Weiser, P S;
Prawer, S;
[1]
Hoffman, A;
[2]
Evan, P J;
[3]
Paterson, P J.K.
[4]
- Melbourne Univ., Parkville, VIC (Australia). School of Physics
- Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry
- Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)
- Royal Melbourne Inst. of Tech., VIC (Australia)
Citation Formats
Weiser, P S, Prawer, S, Hoffman, A, Evan, P J, and Paterson, P J.K.
The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions.
Australia: N. p.,
1993.
Web.
Weiser, P S, Prawer, S, Hoffman, A, Evan, P J, & Paterson, P J.K.
The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions.
Australia.
Weiser, P S, Prawer, S, Hoffman, A, Evan, P J, and Paterson, P J.K.
1993.
"The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions."
Australia.
@misc{etde_447877,
title = {The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions}
author = {Weiser, P S, Prawer, S, Hoffman, A, Evan, P J, and Paterson, P J.K.}
abstractNote = {The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}
title = {The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions}
author = {Weiser, P S, Prawer, S, Hoffman, A, Evan, P J, and Paterson, P J.K.}
abstractNote = {The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}