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Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction

Abstract

Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.
Authors:
Ridgway, M C; Elliman, R G; Rao, M R; [1]  Baribeau, J M [2] 
  1. Australian National Univ., Canberra, ACT (Australia)
  2. National Research Council of Canada, Ottawa, ON (Canada)
Publication Date:
Dec 31, 1993
Product Type:
Miscellaneous
Report Number:
INIS-mf-15527; CONF-9311143-
Reference Number:
SCA: 360102; 665100; PA: AIX-28:024820; EDB-97:041330; SN: 97001752416
Resource Relation:
Conference: 8. Australian conference on nuclear techniques of analysis, Sydney (Australia), 17-19 Nov 1993; Other Information: PBD: 1993; Related Information: Is Part Of Proceedings of the 8. Australian conference on nuclear techniques of analysis; PB: 194 p.
Subject:
36 MATERIALS SCIENCE; 66 PHYSICS; GERMANIUM SILICIDES; RELAXATION; ANNEALING; CHEMICAL REACTION KINETICS; COBALT SILICIDES; CRYSTAL GROWTH; EPITAXY; EXPERIMENTAL DATA; NUCLEATION; POINT DEFECTS; RAMAN SPECTRA; STRUCTURAL CHEMICAL ANALYSIS; TEMPERATURE DEPENDENCE
OSTI ID:
447872
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97616714; TRN: AU9715776024820
Availability:
INIS; OSTI as DE97616714
Submitting Site:
AUN
Size:
pp. 92-94
Announcement Date:

Citation Formats

Ridgway, M C, Elliman, R G, Rao, M R, and Baribeau, J M. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction. Australia: N. p., 1993. Web.
Ridgway, M C, Elliman, R G, Rao, M R, & Baribeau, J M. Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction. Australia.
Ridgway, M C, Elliman, R G, Rao, M R, and Baribeau, J M. 1993. "Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction." Australia.
@misc{etde_447872,
title = {Enhanced relaxation of strained Ge{sub x}Si{sub 1-x} layers induced by Co/Ge{sub x}Si{sub 1-x} thermal reaction}
author = {Ridgway, M C, Elliman, R G, Rao, M R, and Baribeau, J M}
abstractNote = {Enhanced relaxation of strained Ge{sub x}Si{sub l-x} layers during the formation of CoSi{sub 2} by Co/Ge{sub x}Si{sub 1-x} thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/Ge{sub x}Si{sub 1-x} interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig.}
place = {Australia}
year = {1993}
month = {Dec}
}