Abstract
Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.
Nugent, K W;
Prawer, S;
Weiser, P S;
Dooley, S P
[1]
- Melbourne Univ., Parkville, VIC (Australia). School of Physics
Citation Formats
Nugent, K W, Prawer, S, Weiser, P S, and Dooley, S P.
Raman microprobe measurements of stress in ion implanted materials.
Australia: N. p.,
1993.
Web.
Nugent, K W, Prawer, S, Weiser, P S, & Dooley, S P.
Raman microprobe measurements of stress in ion implanted materials.
Australia.
Nugent, K W, Prawer, S, Weiser, P S, and Dooley, S P.
1993.
"Raman microprobe measurements of stress in ion implanted materials."
Australia.
@misc{etde_446221,
title = {Raman microprobe measurements of stress in ion implanted materials}
author = {Nugent, K W, Prawer, S, Weiser, P S, and Dooley, S P}
abstractNote = {Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}
title = {Raman microprobe measurements of stress in ion implanted materials}
author = {Nugent, K W, Prawer, S, Weiser, P S, and Dooley, S P}
abstractNote = {Raman microprobe measurements of ion implanted diamond and silicon have shown significant shifts in the Raman line due to stresses in the materials. The Raman line shifts to higher energy if the stress is compressive and to lower energy for tensile stress{sup 1}. The silicon sample was implanted in a 60 {mu}m square with 2.56 x 10{sup 17} ions per square centimeter of 2 MeV Helium. This led to the formation of raised squares with the top 370mm above the original surface. In Raman studies of silicon using visible light, the depth of penetration of the laser beam into the sample is much less than one micron. It was found that the Raman line is due to the silicon overlying the damage region. The diamond sample was implanted with 2 x 10{sup 15} ions per square centimeter of 2.8 MeV carbon. It was concluded that the Raman spectrum could provide information concerning both the magnitude and the direction of stress in an ion implanted sample. It was possible in some cases to determine whether the stress direction is parallel or perpendicular to the sample surface. 1 refs., 2 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}