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Seeding of silicon by copper ion implantation for selective electroless copper plating

Abstract

We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.
Authors:
Bhansali, S; Sood, D K; Zmood, R B [1] 
  1. Microelectronic and Materials Technology Centre, Royal Melbourne Institute of Technolgy, Melbourne, VIC (Australia)
Publication Date:
Dec 31, 1993
Product Type:
Conference
Report Number:
INIS-mf-15527; CONF-9311143-
Reference Number:
SCA: 665300; 360605; 360602; PA: AIX-28:027253; EDB-97:046786; SN: 97001753929
Resource Relation:
Conference: 8. Australian conference on nuclear techniques of analysis, Sydney (Australia), 17-19 Nov 1993; Other Information: PBD: 1993; Related Information: Is Part Of Proceedings of the 8. Australian conference on nuclear techniques of analysis; PB: 194 p.
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON; COPPER IONS; STRUCTURAL CHEMICAL ANALYSIS; ADHESION; CRYSTAL GROWTH; EPITAXY; PLATING; SURFACE PROPERTIES; THIN FILMS
OSTI ID:
446220
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97616714; TRN: AU9715792027253
Availability:
INIS; OSTI as DE97616714
Submitting Site:
AUN
Size:
pp. 131-133
Announcement Date:

Citation Formats

Bhansali, S, Sood, D K, and Zmood, R B. Seeding of silicon by copper ion implantation for selective electroless copper plating. Australia: N. p., 1993. Web.
Bhansali, S, Sood, D K, & Zmood, R B. Seeding of silicon by copper ion implantation for selective electroless copper plating. Australia.
Bhansali, S, Sood, D K, and Zmood, R B. 1993. "Seeding of silicon by copper ion implantation for selective electroless copper plating." Australia.
@misc{etde_446220,
title = {Seeding of silicon by copper ion implantation for selective electroless copper plating}
author = {Bhansali, S, Sood, D K, and Zmood, R B}
abstractNote = {We report on the successful use of copper(self) ion implantation into silicon to seed the electroless plating of copper on silicon (100) surfaces. Copper ions have been implanted to doses of 5E14-6.4E16 ions/cm{sup 2} using a MEEVA ion implanter at extraction voltage of 40kV. Dose was varied in fine steps to determine the threshold dose of 2E15 Cu ions/cm{sup 2} for `seed` formation of copper films on silicon using a commercial electroless plating solution. Plated films were studied with Rutherford backscattering spectrometry, scanning electron microscopy, EDX and profilometry . The adhesion of films was measured by `scotch tape test`. The adhesion was found to improve with increasing dose. However thicker films exhibited rather poor adhesion and high internal stress. SEM results show that the films grow first as isolated islands which become larger and eventually impinge into a continuous film as the plating time is increased. (authors). 5 refs., 1 tab., 3 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}