You need JavaScript to view this

Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions

Abstract

The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.
Authors:
Wong, Wahchung; Elliman, R G; Kringhoj, P [1] 
  1. Australian National Univ., Canberra, ACT (Australia). Research School of Physical Sciences
Publication Date:
Dec 31, 1993
Product Type:
Miscellaneous
Report Number:
INIS-mf-15527; CONF-9311143-
Reference Number:
SCA: 665300; 360106; PA: AIX-28:027250; EDB-97:046774; SN: 97001753926
Resource Relation:
Conference: 8. Australian conference on nuclear techniques of analysis, Sydney (Australia), 17-19 Nov 1993; Other Information: PBD: 1993; Related Information: Is Part Of Proceedings of the 8. Australian conference on nuclear techniques of analysis; PB: 194 p.
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; SILICON; GERMANIUM IONS; ION IMPLANTATION; ALLOYS; ANNEALING; CHANNELING; ELECTRON MICROSCOPY; EPITAXY; EXPERIMENTAL DATA; PHYSICAL RADIATION EFFECTS; RUTHERFORD SCATTERING
OSTI ID:
446217
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97616714; TRN: AU9715773027250
Availability:
INIS; OSTI as DE97616714
Submitting Site:
AUN
Size:
pp. 83-85
Announcement Date:

Citation Formats

Wong, Wahchung, Elliman, R G, and Kringhoj, P. Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions. Australia: N. p., 1993. Web.
Wong, Wahchung, Elliman, R G, & Kringhoj, P. Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions. Australia.
Wong, Wahchung, Elliman, R G, and Kringhoj, P. 1993. "Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions." Australia.
@misc{etde_446217,
title = {Strain relaxation during solid-phase epitaxial crystallisation of Ge{sub x}Si{sub 1-x} alloy layers with depth dependent G{sub e} compositions}
author = {Wong, Wahchung, Elliman, R G, and Kringhoj, P}
abstractNote = {The solid-phase epitaxial crystallisation of depth dependent Ge{sub x}Si{sub lx} alloy layers produced by implanting Ge into Si substrates was studied. In-situ monitoring was done using time-resolved reflectivity (TRR) whilst post-anneal defect structures were characterised by Rutherford backscattering and channeling spectrometry (RBS-C) and transmission electron microscopy (TEM). Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallisation velocity caused by roughening of the crystalline/amorphous interface. 11 refs., 1 tab., 2 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}