Abstract
This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.
Lai, S T;
Nener, B D;
Faraone, L;
Nassibian, A G;
[1]
Hotchkis, M A.C.
[2]
- Western Australia Univ., Nedlands, WA (Australia)
- Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)
Citation Formats
Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C.
Identification of defects in GaAs induced by 1 MeV electron irradiation.
Australia: N. p.,
1993.
Web.
Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, & Hotchkis, M A.C.
Identification of defects in GaAs induced by 1 MeV electron irradiation.
Australia.
Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C.
1993.
"Identification of defects in GaAs induced by 1 MeV electron irradiation."
Australia.
@misc{etde_446216,
title = {Identification of defects in GaAs induced by 1 MeV electron irradiation}
author = {Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C.}
abstractNote = {This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}
title = {Identification of defects in GaAs induced by 1 MeV electron irradiation}
author = {Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C.}
abstractNote = {This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}