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Identification of defects in GaAs induced by 1 MeV electron irradiation

Abstract

This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.
Authors:
Lai, S T; Nener, B D; Faraone, L; Nassibian, A G; [1]  Hotchkis, M A.C. [2] 
  1. Western Australia Univ., Nedlands, WA (Australia)
  2. Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia)
Publication Date:
Dec 31, 1993
Product Type:
Miscellaneous
Report Number:
INIS-mf-15527; CONF-9311143-
Reference Number:
SCA: 665300; 360206; PA: AIX-28:027249; EDB-97:046781; SN: 97001753925
Resource Relation:
Conference: 8. Australian conference on nuclear techniques of analysis, Sydney (Australia), 17-19 Nov 1993; Other Information: PBD: 1993; Related Information: Is Part Of Proceedings of the 8. Australian conference on nuclear techniques of analysis; PB: 194 p.
Subject:
66 PHYSICS; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; CRYSTAL DEFECTS; PHYSICAL RADIATION EFFECTS; ANNEALING; CRYSTAL MODELS; ELECTRON BEAMS; EXPERIMENTAL DATA; IRRADIATION; SPECTROSCOPY; TRAPPED ELECTRONS; TRAPS
OSTI ID:
446216
Country of Origin:
Australia
Language:
English
Other Identifying Numbers:
Other: ON: DE97616714; TRN: AU9715771027249
Availability:
INIS; OSTI as DE97616714
Submitting Site:
AUN
Size:
pp. 76-79
Announcement Date:

Citation Formats

Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C. Identification of defects in GaAs induced by 1 MeV electron irradiation. Australia: N. p., 1993. Web.
Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, & Hotchkis, M A.C. Identification of defects in GaAs induced by 1 MeV electron irradiation. Australia.
Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C. 1993. "Identification of defects in GaAs induced by 1 MeV electron irradiation." Australia.
@misc{etde_446216,
title = {Identification of defects in GaAs induced by 1 MeV electron irradiation}
author = {Lai, S T, Nener, B D, Faraone, L, Nassibian, A G, and Hotchkis, M A.C.}
abstractNote = {This paper shows that 1 MeV electron irradiation on n-type vapor phase epitaxial (VPE) GaAs creates three electron traps E1, E2 and EL6, and results in the splitting of the EL2 center into two levels EL2-A and EL2-B. A 15 minutes isochronal anneal results in the annihilation of the E1 and E2 traps, a reduction in EL6 trap concentration, and the return of EL2 to a single level EL2-A. A defect model is outlined which correlates with the observed results. 4 refs., 2 tabs., 3 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}