Abstract
Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.
Laird, J S;
Bardos, R A;
Saint, A;
Moloney, G M;
Legge, G F.J.
[1]
- Melbourne Univ., Parkville, VIC (Australia)
Citation Formats
Laird, J S, Bardos, R A, Saint, A, Moloney, G M, and Legge, G F.J.
Scanning deep level transient spectroscopy using an MeV ion microprobe.
Australia: N. p.,
1993.
Web.
Laird, J S, Bardos, R A, Saint, A, Moloney, G M, & Legge, G F.J.
Scanning deep level transient spectroscopy using an MeV ion microprobe.
Australia.
Laird, J S, Bardos, R A, Saint, A, Moloney, G M, and Legge, G F.J.
1993.
"Scanning deep level transient spectroscopy using an MeV ion microprobe."
Australia.
@misc{etde_446197,
title = {Scanning deep level transient spectroscopy using an MeV ion microprobe}
author = {Laird, J S, Bardos, R A, Saint, A, Moloney, G M, and Legge, G F.J.}
abstractNote = {Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}
title = {Scanning deep level transient spectroscopy using an MeV ion microprobe}
author = {Laird, J S, Bardos, R A, Saint, A, Moloney, G M, and Legge, G F.J.}
abstractNote = {Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.}
place = {Australia}
year = {1993}
month = {Dec}
}