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CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure

Abstract

The synthesis and structure of a new ternary silver telluride, CsAg{sub 5}Te{sub 3}, is described. The compound was prepared from a Cs{sub 2}Te-CaTe-Te flux but it can also be prepared from a direct combination of Cs{sub 2}Te and Ag{sub 2}Te under vacuum at 600 C. The crystal data for CsAg{sub 5}Te{sub 3} at 20 C (Mo K{alpha} radiation) are as follows: a=14.672(2) A and c=4.601(3) A; V=990.5(8) A{sup 3}; Z=4; D{sub calc}=7.075 g cm{sup -3}; space group, P4{sub 2} /mnm (No. 136); 2{theta}{sub max}=50 ; number of independent data collected, 572; number of data observed with I>3{sigma}(I), 267; number of variables, 32; {mu}=218.51 cm{sup -1}; extinction coefficient, 0.585x10{sup -7}; final R=0.040; R{sub w}=0.046; goodness of fit, 1.42. The compound features a new structure type with Cs{sup +}-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV. ((orig.))
Authors:
Jing, Li; [1]  Hongyou, Guo; [1]  Xiang, Zhang; [2]  Kanatzidis, M G [2] 
  1. Rutgers Univ., Camden, NJ (United States). Dept. of Chem.
  2. Michigan State Univ., East Lansing, MI (United States). Dept. of Chemistry
Publication Date:
Feb 15, 1995
Product Type:
Journal Article
Reference Number:
SCA: 360202; 360201; PA: CHF-95:0G8957; EDB-95:071395; SN: 95001388576
Resource Relation:
Journal Name: Journal of Alloys and Compounds; Journal Volume: 218; Journal Issue: 1; Other Information: PBD: 15 Feb 1995
Subject:
36 MATERIALS SCIENCE; CESIUM TELLURIDES; CRYSTAL STRUCTURE; SILVER TELLURIDES; BOND ANGLE; BOND LENGTHS; CHEMICAL COMPOSITION; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ENERGY GAP; LATTICE PARAMETERS; SEMICONDUCTOR MATERIALS; SPACE GROUPS; TEMPERATURE DEPENDENCE; INFRARED SPECTRA
OSTI ID:
43889
Country of Origin:
Switzerland
Language:
English
Other Identifying Numbers:
Journal ID: JALCEU; ISSN 0925-8388; TRN: CH95G8957
Submitting Site:
CHF
Size:
pp. 1-4
Announcement Date:
May 26, 1995

Citation Formats

Jing, Li, Hongyou, Guo, Xiang, Zhang, and Kanatzidis, M G. CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure. Switzerland: N. p., 1995. Web.
Jing, Li, Hongyou, Guo, Xiang, Zhang, & Kanatzidis, M G. CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure. Switzerland.
Jing, Li, Hongyou, Guo, Xiang, Zhang, and Kanatzidis, M G. 1995. "CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure." Switzerland.
@misc{etde_43889,
title = {CsAg{sub 5}Te{sub 3}: a new metal-rich telluride with a unique tunnel structure}
author = {Jing, Li, Hongyou, Guo, Xiang, Zhang, and Kanatzidis, M G}
abstractNote = {The synthesis and structure of a new ternary silver telluride, CsAg{sub 5}Te{sub 3}, is described. The compound was prepared from a Cs{sub 2}Te-CaTe-Te flux but it can also be prepared from a direct combination of Cs{sub 2}Te and Ag{sub 2}Te under vacuum at 600 C. The crystal data for CsAg{sub 5}Te{sub 3} at 20 C (Mo K{alpha} radiation) are as follows: a=14.672(2) A and c=4.601(3) A; V=990.5(8) A{sup 3}; Z=4; D{sub calc}=7.075 g cm{sup -3}; space group, P4{sub 2} /mnm (No. 136); 2{theta}{sub max}=50 ; number of independent data collected, 572; number of data observed with I>3{sigma}(I), 267; number of variables, 32; {mu}=218.51 cm{sup -1}; extinction coefficient, 0.585x10{sup -7}; final R=0.040; R{sub w}=0.046; goodness of fit, 1.42. The compound features a new structure type with Cs{sup +}-filled, relatively large tunnels running through the lattice. The material is a semiconductor with a band gap of about 0.65 eV. ((orig.))}
journal = []
issue = {1}
volume = {218}
journal type = {AC}
place = {Switzerland}
year = {1995}
month = {Feb}
}