Described herein are the results of the FY1994 research program for analysis and evaluation for development of extra-high efficiency silicon solar cells. It is necessary for development of extra-high efficiency Si solar cells to extend as far as possible service life of minority carriers and to develop the evaluation techniques. Noting photoluminescence (PL) observable even with Si, the method of evaluating characteristics of minority carriers, which are not limited in samples, is developed to experimentally determine their service life from transitional response of the PL characteristics. Si has an extremely low quantum effect, because it is an indirect transitional semiconductor, and needs measurement of very high sensitivity. A rapid heat annealing apparatus and others to generate carriers in the infrared and ultraviolet regions are provided in consideration that these are possible means to increase efficiency. These possibilities will be pursued by developing the annealing techniques. 1 fig.