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Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo)

Abstract

Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of amorphous silicon, as revealed by the accelerated degradation test with irradiated laser light and the constant current method to determine saturated defect density. 3 figs.
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140600; PA: NEDO-96:820238; EDB-97:024931; SN: 97001728519
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; THIN FILMS; SILICON; ALLOYS; AMORPHOUS STATE; INTERFACES; IMPURITIES; PLASMA; SILANES; CRYSTAL DEFECTS
OSTI ID:
425192
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820238
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 437-442
Announcement Date:

Citation Formats

Matsuda, A, Oeda, H, Yamasaki, S, Hata, N, Kondo, M, Toshima, Y, Sakata, I, Ganguly, G, Suzuki, A, Kamei, T, Okushi, H, Nonaka, H, Oda, N, Katagiri, H, Ichimura, N, Kokubu, K, Nakamura, K, Sekikawa, T, and Yamanaka, M. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo). Japan: N. p., 1994. Web.
Matsuda, A, Oeda, H, Yamasaki, S, Hata, N, Kondo, M, Toshima, Y, Sakata, I, Ganguly, G, Suzuki, A, Kamei, T, Okushi, H, Nonaka, H, Oda, N, Katagiri, H, Ichimura, N, Kokubu, K, Nakamura, K, Sekikawa, T, & Yamanaka, M. Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo). Japan.
Matsuda, A, Oeda, H, Yamasaki, S, Hata, N, Kondo, M, Toshima, Y, Sakata, I, Ganguly, G, Suzuki, A, Kamei, T, Okushi, H, Nonaka, H, Oda, N, Katagiri, H, Ichimura, N, Kokubu, K, Nakamura, K, Sekikawa, T, and Yamanaka, M. 1994. "Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo)." Japan.
@misc{etde_425192,
title = {Analysis and evaluation for practical application of photovoltaic power generation system. Analysis and evaluation for thin substrate polycrystalline solar cells (alloy-base amorphous materials, PIN layers, strains in the interface, and effects of impurities); Taiyoko hatsuden system jitsuyoka no tame no kaiseki hyoka. Usumaku taiyo denchi jitsuyoka no tame no kaiseki hyoka (gokinkei amorphous zairyo pin kakuso kaimen ni okeru yugami fujunbutsu nado no eikyo)}
author = {Matsuda, A, Oeda, H, Yamasaki, S, Hata, N, Kondo, M, Toshima, Y, Sakata, I, Ganguly, G, Suzuki, A, Kamei, T, Okushi, H, Nonaka, H, Oda, N, Katagiri, H, Ichimura, N, Kokubu, K, Nakamura, K, Sekikawa, T, and Yamanaka, M}
abstractNote = {Described herein are the results of the FY1994 research program for analysis and evaluation for thin film solar cells. The study on quantitative analysis of hydrogen atoms in a plasma determines quantity of hydrogen atoms in the plasma of monosilane diluted with hydrogen. It is found, contrary to expectation, that quantity of hydrogen atoms in the plasma decreases as it is more diluted with hydrogen. The study on light-induced degradation of the thin chlorine-base amorphous silicon films confirms that the plasma CVD method with 20% of dichlorosilane gas added to monosilane gas produces the thin amorphous silicon film 3 times faster than the conventional method. The thin film has essentially the same defect density as the one prepared by the conventional method, showing good photoelectric characteristics. The thin film of chlorinated amorphous silicon has a 1 digit lower defect density than the conventional one of amorphous silicon, as revealed by the accelerated degradation test with irradiated laser light and the constant current method to determine saturated defect density. 3 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}