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Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu

Abstract

Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from 0 to 12at%. The other results presented are space distribution of neutral defects of light-irradiated a-Si-H systems, and rejuvenation process of light-induced spin for the a-Si(1-x)N(x):H composition. 6 figs.
Authors:
Shimizu, T [1] 
  1. Kanazawa University, Ishikawa (Japan). Faculty of Engineering
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140600; PA: NEDO-96:820235; EDB-97:024920; SN: 97001728516
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; AMORPHOUS STATE; SILICON; CRYSTAL DEFECTS; ANNEALING; ACTIVATION ENERGY; SOLAR RADIATION; HYDROGEN; NITROGEN ADDITIONS
OSTI ID:
425189
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820235
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 417-422
Announcement Date:

Citation Formats

Shimizu, T. Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu. Japan: N. p., 1994. Web.
Shimizu, T. Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu. Japan.
Shimizu, T. 1994. "Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu." Japan.
@misc{etde_425189,
title = {Research and development of photovoltaic power system. Study on structural defects in silicon-based amorphous materials; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kei zairyo no kozo kekkan ni kansuru kenkyu}
author = {Shimizu, T}
abstractNote = {Described herein are the results of the FY1994 research program for structural defects of silicon-based amorphous materials for solar cells. The study on light generation defects of the a-Si:H system and rejuvenation process by annealing establishes the effects of light irradiation time on changed neutral dangling bond density as a result of light irradiation at varying temperature of 77K, room temperature and 393K. The study on annealing to rejuvenate light generation defects of various types of a-Si-H systems establishes the activation energy distribution with respect to annealing to remove light-induced defects, showing that hydrogen affects the distribution of light-induced defects. The study on decaying process of light-induced ESR for undoped and N-doped a-Si:H systems observes the decaying process of light-induced ESR, after light is cut off, extending for a period of several seconds to several hours at 77K for the a-Si-H systems containing N in a range from 0 to 12at%. The other results presented are space distribution of neutral defects of light-irradiated a-Si-H systems, and rejuvenation process of light-induced spin for the a-Si(1-x)N(x):H composition. 6 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}