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Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu

Abstract

This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.
Authors:
Konagai, M [1] 
  1. Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140600; PA: NEDO-96:820234; EDB-97:024934; SN: 97001728515
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; SILICON; AMORPHOUS STATE; THIN FILMS; ZINC OXIDES; ELECTRIC CONDUCTIVITY; GRAIN SIZE; INTERFACES; ENERGY EFFICIENCY
OSTI ID:
425188
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820234
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 410-416
Announcement Date:

Citation Formats

Konagai, M. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu. Japan: N. p., 1994. Web.
Konagai, M. Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu. Japan.
Konagai, M. 1994. "Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu." Japan.
@misc{etde_425188,
title = {Research and development of photovoltaic power system. Interface studies of amorphous silicon; Taiyoko hatsuden system no kenkyu kaihatsu. Amorphous silicon kaimen no kenkyu}
author = {Konagai, M}
abstractNote = {This paper reports the result obtained during fiscal 1994 on research on interface of amorphous silicon for solar cells. In research on amorphous solar cells using ZnO for transparent electrically conductive films, considerations were given on a growth mechanism of a ZnO film using the MOCVD process. It was made clear that the ZnO film grows with Zn(OH)2 working as a film forming species. It was also shown that the larger the ZnO particle size is, the more the solar cell efficiency is improved. Furthermore, theoretical elucidation was made on effects of rear face of an interface on cell characteristics, and experimental discussions were given subsequently. In research on solar cells using hydrogen diluted `i` layers, delta-doped solar cells were fabricated based on basic data obtained in the previous fiscal year, and the hydrogen dilution effect was evaluated from the cell characteristics. When the hydrogen dilution ratio is increased from zero to one, the conversion efficiency has improved from 12.2% to 12.6%. In addition, experiments and discussions were given on solar cells fabricated by using SiH2Cl2. 9 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}