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Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu

Abstract

This paper reports the result obtained during fiscal 1994 on research on a technology of low temperature deposition of polycrystalline thin films for solar cells. This research used ITO coated glass substrates, on which CdS was accumulated to a thickness of about 100 nm by using the CBD process, and over this deposition a CuInSe2 film was formed at 300{degree}C by using the ion cluster beam (ICB) process. The manufactured solar cells with a glass/ITO/CdS/CuInSe2/Au structure had an efficiency of 2%. In manufacturing a CuGaSe2 thin film by using the ICB process, effects of acceleration voltage relative to cluster beams and ionization current were investigated. It was found that the film morphology, the result of analysis by using X-ray diffraction, and the electric conductivity are sensitive to the ionization current. From these findings, an optimum film forming condition was derived. A CuGaSe2 thin film was manufactured by using the ICB process over a Cds thin film deposited by using the CDB process. Both of the surface morphology and X-ray diffraction patterns of the film did not show a large change, indicating a possibility of manufacturing cells with a reverse structure. Effects of heat treatment on CuInSe2 monocrystals were evaluated by  More>>
Authors:
Sato, K [1] 
  1. Tokyo Univ. of Agriculture and Technology, Tokyo (Japan). Faculty of Technology
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140600; PA: NEDO-96:820231; EDB-97:024942; SN: 97001728512
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; MANUFACTURING; THIN FILMS; TEMPERATURE DEPENDENCE; SUBSTRATES; GLASS; SELENIUM COMPOUNDS; MONOCRYSTALS; ENERGY EFFICIENCY; MORPHOLOGY
OSTI ID:
425185
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820231
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 390-395
Announcement Date:

Citation Formats

Sato, K. Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu. Japan: N. p., 1994. Web.
Sato, K. Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu. Japan.
Sato, K. 1994. "Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu." Japan.
@misc{etde_425185,
title = {Research and development of photovoltaic power system. Research on low temperature deposition of polycrystalline thin films; Taiyoko hatsuden system no kenkyu kaihatsu. Teion seimaku gijutsu no kenkyu kaihatsu}
author = {Sato, K}
abstractNote = {This paper reports the result obtained during fiscal 1994 on research on a technology of low temperature deposition of polycrystalline thin films for solar cells. This research used ITO coated glass substrates, on which CdS was accumulated to a thickness of about 100 nm by using the CBD process, and over this deposition a CuInSe2 film was formed at 300{degree}C by using the ion cluster beam (ICB) process. The manufactured solar cells with a glass/ITO/CdS/CuInSe2/Au structure had an efficiency of 2%. In manufacturing a CuGaSe2 thin film by using the ICB process, effects of acceleration voltage relative to cluster beams and ionization current were investigated. It was found that the film morphology, the result of analysis by using X-ray diffraction, and the electric conductivity are sensitive to the ionization current. From these findings, an optimum film forming condition was derived. A CuGaSe2 thin film was manufactured by using the ICB process over a Cds thin film deposited by using the CDB process. Both of the surface morphology and X-ray diffraction patterns of the film did not show a large change, indicating a possibility of manufacturing cells with a reverse structure. Effects of heat treatment on CuInSe2 monocrystals were evaluated by using ESR and FTIR. 6 figs., 1 tab.}
place = {Japan}
year = {1994}
month = {Dec}
}