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Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu

Abstract

This paper reports the result obtained during fiscal 1994 on research on research on optimization of bandgap in thin film compound solar cells. In research on Cu(InGa)Se2 thin film solar cells by using a gas phase selenide making process, discussions were given on optimizing the following three processes: a process to raise temperature of a precursor film formed at a substrate temperature of about 150{degree}C, a selenide making process to perform annealing at about 500{degree}C, and a temperature reducing process. Good characteristics were obtained when selenium amount in the precursor is about 50%. In a bandgap control viewpoint, it was found that the conversion efficiency decreases rapidly when Ga composition is higher than 50%. A conversion efficiency of 14.9% was obtained to date at the Ga/(In+Ga) ratio of 0.4. In research on Cu(InGa)Se2 thin film solar cells by using a simultaneous deposition method, a conversion efficiency of 13.5% was obtained at a bandgap width of about 1.3 eV during research on manufacturing ZnO/CdS/Cu(InGa)Se2 thin film solar cells by using the simultaneous deposition method. Research has been carried out on manufacturing Cu(InGa)Se2 thin film solar cells using ZnSe interface layers. 8 figs.
Authors:
Konagai, M [1] 
  1. Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140600; PA: NEDO-96:820230; EDB-97:024923; SN: 97001728511
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; THIN FILMS; SELENIUM COMPOUNDS; FORBIDDEN TRANSITIONS; ANNEALING; TEMPERATURE DEPENDENCE; OPTIMIZATION; ENERGY EFFICIENCY; CHEMICAL VAPOR DEPOSITION
OSTI ID:
425184
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820230
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 383-389
Announcement Date:

Citation Formats

Konagai, M. Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu. Japan: N. p., 1994. Web.
Konagai, M. Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu. Japan.
Konagai, M. 1994. "Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu." Japan.
@misc{etde_425184,
title = {Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu}
author = {Konagai, M}
abstractNote = {This paper reports the result obtained during fiscal 1994 on research on research on optimization of bandgap in thin film compound solar cells. In research on Cu(InGa)Se2 thin film solar cells by using a gas phase selenide making process, discussions were given on optimizing the following three processes: a process to raise temperature of a precursor film formed at a substrate temperature of about 150{degree}C, a selenide making process to perform annealing at about 500{degree}C, and a temperature reducing process. Good characteristics were obtained when selenium amount in the precursor is about 50%. In a bandgap control viewpoint, it was found that the conversion efficiency decreases rapidly when Ga composition is higher than 50%. A conversion efficiency of 14.9% was obtained to date at the Ga/(In+Ga) ratio of 0.4. In research on Cu(InGa)Se2 thin film solar cells by using a simultaneous deposition method, a conversion efficiency of 13.5% was obtained at a bandgap width of about 1.3 eV during research on manufacturing ZnO/CdS/Cu(InGa)Se2 thin film solar cells by using the simultaneous deposition method. Research has been carried out on manufacturing Cu(InGa)Se2 thin film solar cells using ZnSe interface layers. 8 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}