Abstract
This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.
Tatsuta, M
[1]
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Citation Formats
Tatsuta, M.
Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu).
Japan: N. p.,
1994.
Web.
Tatsuta, M.
Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu).
Japan.
Tatsuta, M.
1994.
"Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)."
Japan.
@misc{etde_425156,
title = {Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.}
place = {Japan}
year = {1994}
month = {Dec}
}
title = {Research on fabrication technology for thin film solar cells for practical use. Technological development for qualitative improvement (improvement of conversion efficiency of amorphous silicon solar cells after degradation); Usumaku taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Kohinshitsuka gijutsu (amorphous taiyo denchi no shoki rekkago koritsu kojo no gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on technological development for qualitative improvement of a-Si solar cells after initial degradation in fiscal 1994. On the fabrication technology of light-stable a-Si films, the film formation method possible to control combined hydrogen by repetitive formation/treatment was developed. The obtained high-quality light-stable a-Si film was featured by low defect density in a wide optical band gap range, and defect density of nearly 3 {times} 10{sup 16}/cm{sup -3} after light irradiation. The light degradation rate of the cell where the a-Si film was applied to i layer was relatively stable by 10% or less. The a-Si/a-Si double-layer tandem cell fabricated by this technology produced a high conversion efficiency of 10.5%. By applying {mu}c-Si material to photoactive layer as narrow band gap material, the cell with optical sensitivity even in long wavelength ranges more than 1000nm was obtained. The a-Si/{mu}c-Si double-layer tandem cell produced an initial efficiency of 8.0% and an efficiency after degradation of 7.5%. 12 figs., 3 tabs.}
place = {Japan}
year = {1994}
month = {Dec}
}