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Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu

Abstract

This paper reports the survey results on the manufacturing technology trend of thin substrate solar cells for practical use in fiscal 1994. In production of Si raw material, as electron beam melting and ingot production are combined, C, P, Ca and Al are removed by evaporation, while Fe and Ti by solidifying segregation. As the basic technology of continuous casting for substrate production, a drop coagulation method for Si melt is under investigation which is more advantageous in unidirectional solidification and cell conversion efficiency than conventional methods. The cost and future of single crystal Si and polycrystal Si were compared on the basis of document survey. Every institute commonly uses FZ substrates to produce single crystal Si cells, and SiO2 for surface passivation. New cell structure, hetero-structure, thin cell, crystalline defect and lifetime are under investigation for ultrahigh-efficiency solar cells. The technology trend was also surveyed through academic societies and conferences. 5 tabs.
Authors:
Tatsuta, M [1] 
  1. New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Publication Date:
Dec 01, 1994
Product Type:
Technical Report
Report Number:
ETDE/JP-mf-97725454
Reference Number:
SCA: 140501; PA: NEDO-96:820198; EDB-97:024873; SN: 97001728479
Resource Relation:
Other Information: PBD: Dec 1994; Related Information: Is Part Of Japan`s New Sunshine Project. 1994 annual summary of solar energy R and D program; PB: 522 p.; 1994 nendo new sunshine keikaku. Seika hokokusho gaiyoshu (taiyo energy)
Subject:
14 SOLAR ENERGY; PHOTOVOLTAIC CELLS; MANUFACTURING; SILICON; PHOTOVOLTAIC CONVERSION; MELTING; ELECTRON BEAMS; SOLIDIFICATION; PRECIPITATION; CASTING; MONOCRYSTALS; POLYCRYSTALS; PASSIVATION
OSTI ID:
425152
Research Organizations:
New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Country of Origin:
Japan
Language:
Japanese
Other Identifying Numbers:
Other: ON: DE97725454; TRN: 96:820198
Availability:
Available from Office of Scientific and Technical Information, P.O.Box 1000, Oak Ridge Tennessee 37831, USA; OSTI as DE97725454
Submitting Site:
NEDO
Size:
pp. 30-36
Announcement Date:

Citation Formats

Tatsuta, M. Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu. Japan: N. p., 1994. Web.
Tatsuta, M. Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu. Japan.
Tatsuta, M. 1994. "Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu." Japan.
@misc{etde_425152,
title = {Development of technology for thin substrate polycrystalline solar cells for practical use. Survey on analysis for practical use; Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Jitsuyoka kaiseki ni kansuru chosa kenkyu}
author = {Tatsuta, M}
abstractNote = {This paper reports the survey results on the manufacturing technology trend of thin substrate solar cells for practical use in fiscal 1994. In production of Si raw material, as electron beam melting and ingot production are combined, C, P, Ca and Al are removed by evaporation, while Fe and Ti by solidifying segregation. As the basic technology of continuous casting for substrate production, a drop coagulation method for Si melt is under investigation which is more advantageous in unidirectional solidification and cell conversion efficiency than conventional methods. The cost and future of single crystal Si and polycrystal Si were compared on the basis of document survey. Every institute commonly uses FZ substrates to produce single crystal Si cells, and SiO2 for surface passivation. New cell structure, hetero-structure, thin cell, crystalline defect and lifetime are under investigation for ultrahigh-efficiency solar cells. The technology trend was also surveyed through academic societies and conferences. 5 tabs.}
place = {Japan}
year = {1994}
month = {Dec}
}