Abstract
This paper reports the study results on manufacturing of low-cost Si substrates by continuous casting method in fiscal 1994. (1) On manufacturing of ingots of 16 piece size, the ingot of nearly 170kg was manufactured by batch process using the Si melt injection unit prepared in last year. (2) On oxygen and carbon contents in wafers, the contents were measured by FT-IR after slicing of the ingot. As a result, the oxygen and carbon contents could be successfully reduced to the targets of 10ppma and 5ppma or less, respectively. (3) The resistivity distribution of the ingot ranged over the target of 1-2ohm-cm. (4) Cells of 100 {times} 100mm{sup 2} wide and 350{mu}m thick were verified by in-house evaluation process. Although lower cell conversion efficiency was found at the center top of the ingot, a vertical efficiency stability was nearly sufficient as a whole. (5) On the crystal growth unit prepared in fiscal 1994, any problems were not found on automatic driving and vibration during moving. 8 figs.
Tatsuta, M
[1]
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Citation Formats
Tatsuta, M.
Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu).
Japan: N. p.,
1994.
Web.
Tatsuta, M.
Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu).
Japan.
Tatsuta, M.
1994.
"Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu)."
Japan.
@misc{etde_425150,
title = {Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on manufacturing of low-cost Si substrates by continuous casting method in fiscal 1994. (1) On manufacturing of ingots of 16 piece size, the ingot of nearly 170kg was manufactured by batch process using the Si melt injection unit prepared in last year. (2) On oxygen and carbon contents in wafers, the contents were measured by FT-IR after slicing of the ingot. As a result, the oxygen and carbon contents could be successfully reduced to the targets of 10ppma and 5ppma or less, respectively. (3) The resistivity distribution of the ingot ranged over the target of 1-2ohm-cm. (4) Cells of 100 {times} 100mm{sup 2} wide and 350{mu}m thick were verified by in-house evaluation process. Although lower cell conversion efficiency was found at the center top of the ingot, a vertical efficiency stability was nearly sufficient as a whole. (5) On the crystal growth unit prepared in fiscal 1994, any problems were not found on automatic driving and vibration during moving. 8 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}
title = {Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (low-cost Si sheets by continuous casting method); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (renzoku cast ho ni yoru tei cost Si kiban seizo gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on manufacturing of low-cost Si substrates by continuous casting method in fiscal 1994. (1) On manufacturing of ingots of 16 piece size, the ingot of nearly 170kg was manufactured by batch process using the Si melt injection unit prepared in last year. (2) On oxygen and carbon contents in wafers, the contents were measured by FT-IR after slicing of the ingot. As a result, the oxygen and carbon contents could be successfully reduced to the targets of 10ppma and 5ppma or less, respectively. (3) The resistivity distribution of the ingot ranged over the target of 1-2ohm-cm. (4) Cells of 100 {times} 100mm{sup 2} wide and 350{mu}m thick were verified by in-house evaluation process. Although lower cell conversion efficiency was found at the center top of the ingot, a vertical efficiency stability was nearly sufficient as a whole. (5) On the crystal growth unit prepared in fiscal 1994, any problems were not found on automatic driving and vibration during moving. 8 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}