Abstract
This paper reports the study results on development of manufacturing technologies of Si for solar cells in fiscal 1994. (1) P in Si could be successfully reduced to 0.1ppmw by EB melting method. The condition possible to reduce P in Si while continuously supplying metal Si was found. The 20kg class EB melting equipment was also designed and manufactured which can be connected with solidifying rough refining process. (2) Use of a water-cooling copper mold was studied using a small melting equipment for cost reduction in solidifying rough refining process. As a result, the prospect of crucible-free technology for removal of P and solidifying rough refining was obtained. (3) B in Si could be successfully reduced to the target of 0.1ppmw by vapor addition method using a plasma melting equipment. (4) The prototype SOG-Si achieved a conversion efficiency of 14.1% as solar cell. In addition, the advanced solar cell prepared by efficiency enhancement process achieved a conversion efficiency of 15.9%. 3 figs.
Tatsuta, M
[1]
- New Energy and Industrial Technology Development Organization, Tokyo (Japan)
Citation Formats
Tatsuta, M.
Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu).
Japan: N. p.,
1994.
Web.
Tatsuta, M.
Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu).
Japan.
Tatsuta, M.
1994.
"Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu)."
Japan.
@misc{etde_425148,
title = {Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on development of manufacturing technologies of Si for solar cells in fiscal 1994. (1) P in Si could be successfully reduced to 0.1ppmw by EB melting method. The condition possible to reduce P in Si while continuously supplying metal Si was found. The 20kg class EB melting equipment was also designed and manufactured which can be connected with solidifying rough refining process. (2) Use of a water-cooling copper mold was studied using a small melting equipment for cost reduction in solidifying rough refining process. As a result, the prospect of crucible-free technology for removal of P and solidifying rough refining was obtained. (3) B in Si could be successfully reduced to the target of 0.1ppmw by vapor addition method using a plasma melting equipment. (4) The prototype SOG-Si achieved a conversion efficiency of 14.1% as solar cell. In addition, the advanced solar cell prepared by efficiency enhancement process achieved a conversion efficiency of 15.9%. 3 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}
title = {Development of technology for thin substrate polycrystalline solar cells for practical use. Development of manufacturing technologies for low-cost substrates (technical development for production of high purity silicon); Usugata takessho taiyo denchi seizo gijutsu no jitsuyoka kenkyu. Tei cost kiban seizo gijutsu kaihatsu (taiyo denchiyo silicon seizo gijutsu kaihatsu)}
author = {Tatsuta, M}
abstractNote = {This paper reports the study results on development of manufacturing technologies of Si for solar cells in fiscal 1994. (1) P in Si could be successfully reduced to 0.1ppmw by EB melting method. The condition possible to reduce P in Si while continuously supplying metal Si was found. The 20kg class EB melting equipment was also designed and manufactured which can be connected with solidifying rough refining process. (2) Use of a water-cooling copper mold was studied using a small melting equipment for cost reduction in solidifying rough refining process. As a result, the prospect of crucible-free technology for removal of P and solidifying rough refining was obtained. (3) B in Si could be successfully reduced to the target of 0.1ppmw by vapor addition method using a plasma melting equipment. (4) The prototype SOG-Si achieved a conversion efficiency of 14.1% as solar cell. In addition, the advanced solar cell prepared by efficiency enhancement process achieved a conversion efficiency of 15.9%. 3 figs.}
place = {Japan}
year = {1994}
month = {Dec}
}