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Third harmonic generation of high power far infrared radiation in semiconductors

Abstract

We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of  More>>
Authors:
Urban, M [1] 
  1. Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
Publication Date:
Apr 01, 1996
Product Type:
Technical Report
Report Number:
LRP-546/96
Reference Number:
SCA: 700320; PA: AIX-27:067122; EDB-96:147448; NTS-97:001842; SN: 96001666594
Resource Relation:
Other Information: PBD: Apr 1996
Subject:
70 PLASMA PHYSICS AND FUSION; FAR INFRARED RADIATION; HARMONIC GENERATION; PLASMA DIAGNOSTICS; SEMICONDUCTOR MATERIALS; CONVERSION; EFFICIENCY; EXPERIMENTAL DATA; LASERS; NONLINEAR PROBLEMS; THEORETICAL DATA
OSTI ID:
371227
Research Organizations:
Ecole Polytechnique Federale, Lausanne (Switzerland). Centre de Recherche en Physique des Plasma (CRPP)
Country of Origin:
Switzerland
Language:
English
Other Identifying Numbers:
Other: ON: DE97600906; TRN: CH9600604067122
Availability:
INIS; OSTI as DE97600906
Submitting Site:
CHN
Size:
104 p.
Announcement Date:

Citation Formats

Urban, M. Third harmonic generation of high power far infrared radiation in semiconductors. Switzerland: N. p., 1996. Web.
Urban, M. Third harmonic generation of high power far infrared radiation in semiconductors. Switzerland.
Urban, M. 1996. "Third harmonic generation of high power far infrared radiation in semiconductors." Switzerland.
@misc{etde_371227,
title = {Third harmonic generation of high power far infrared radiation in semiconductors}
author = {Urban, M}
abstractNote = {We investigated the third harmonic generation of high power infrared radiation in doped semiconductors with emphasis on the conversion efficiency. The third harmonic generation effect is based on the nonlinear response of the conduction band electrons in the semiconductor with respect to the electric field of the incident electromagnetic wave. Because this work is directed towards a proposed application in fusion plasma diagnostics, the experimental requirements for the radiation source at the fundamental frequency are roughly given as follows: a wavelength of the radiation at the fundamental frequency in the order of 1 mm and an incident power greater than 1 MW. The most important experiments of this work were performed using the high power far infrared laser of the CRPP. With this laser a new laser line was discovered, which fits exactly the source specifications given above: the wavelength is 676 {mu}m and the maximum power is up to 2 MW. Additional experiments were carried out using a 496 {mu}m laser and a 140 GHz (2.1 mm) gyrotron. The main experimental progress with respect to previous work in this field is, in addition to the use of a very high power laser, the possibility of an absolute calibration of the detectors for the far infrared radiation and the availability of a new type of detector with a very fast response. This detector made it possible to measure the power at the fundamental as well as the third harmonic frequency with full temporal resolution of the fluctuations during the laser pulse. Therefore the power dependence of the third harmonic generation efficiency could be measured directly. The materials investigated were InSb as an example of a narrow gap semiconductor and Si as standard material. The main results are: narrow gap semiconductors indeed have a highly nonlinear electronic response, but the narrow band gap leads at the same time to a low power threshold for internal breakdown, which is due to impact ionization. figs., tabs., refs.}
place = {Switzerland}
year = {1996}
month = {Apr}
}