Abstract
MOCVD Ti N films were prepared from a new Ti N precursor, tetrakis(ethylmethylamino)titanium (TEMAT) and ammonia. Deposition of Ti N films from a single precursor, TEMAT yielded the growth rates of 70 to 1050 A/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over 0.35{mu}m contacts was obtained at 275 deg. C. The addition of ammonia to TEMAT lowered the resistivity of as-deposited Ti N film to {approx}800{mu}{Omega}-cm from 3500{approx}6000{mu}{Omega}-cm and improved the stability of Ti N film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of Ti N films over 0.5{mu}m contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMAT and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transamination reaction was proposed to be responsible for Ti N deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMAT and ammonia was metallic carbon, suggesting that {beta}-hydrogen activation process occurs competitively with the transamination reaction. (author). 11 refs., 10 figs.
Choi, J H;
Lee, J G;
Kim, J Y;
[1]
Lee, E G;
[2]
Hong, H N;
[3]
Shin, H K
[4]
- Kookmin University, Seoul (Korea, Republic of)
- Chosun University, Kwangju (Korea, Republic of)
- Agency for Defense Development, Taejon (Korea, Republic of)
- Ultra Pure Chemical Inc., Suwon (Korea, Republic of)
Citation Formats
Choi, J H, Lee, J G, Kim, J Y, Lee, E G, Hong, H N, and Shin, H K.
Formation of MOCVD Ti N from a New Precursor.
Korea, Republic of: N. p.,
1999.
Web.
Choi, J H, Lee, J G, Kim, J Y, Lee, E G, Hong, H N, & Shin, H K.
Formation of MOCVD Ti N from a New Precursor.
Korea, Republic of.
Choi, J H, Lee, J G, Kim, J Y, Lee, E G, Hong, H N, and Shin, H K.
1999.
"Formation of MOCVD Ti N from a New Precursor."
Korea, Republic of.
@misc{etde_366129,
title = {Formation of MOCVD Ti N from a New Precursor}
author = {Choi, J H, Lee, J G, Kim, J Y, Lee, E G, Hong, H N, and Shin, H K}
abstractNote = {MOCVD Ti N films were prepared from a new Ti N precursor, tetrakis(ethylmethylamino)titanium (TEMAT) and ammonia. Deposition of Ti N films from a single precursor, TEMAT yielded the growth rates of 70 to 1050 A/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over 0.35{mu}m contacts was obtained at 275 deg. C. The addition of ammonia to TEMAT lowered the resistivity of as-deposited Ti N film to {approx}800{mu}{Omega}-cm from 3500{approx}6000{mu}{Omega}-cm and improved the stability of Ti N film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of Ti N films over 0.5{mu}m contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMAT and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transamination reaction was proposed to be responsible for Ti N deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMAT and ammonia was metallic carbon, suggesting that {beta}-hydrogen activation process occurs competitively with the transamination reaction. (author). 11 refs., 10 figs.}
journal = []
issue = {3}
volume = {9}
journal type = {AC}
place = {Korea, Republic of}
year = {1999}
month = {Mar}
}
title = {Formation of MOCVD Ti N from a New Precursor}
author = {Choi, J H, Lee, J G, Kim, J Y, Lee, E G, Hong, H N, and Shin, H K}
abstractNote = {MOCVD Ti N films were prepared from a new Ti N precursor, tetrakis(ethylmethylamino)titanium (TEMAT) and ammonia. Deposition of Ti N films from a single precursor, TEMAT yielded the growth rates of 70 to 1050 A/min, depending on the deposition temperature. Furthermore, the excellent bottom coverage of -90% over 0.35{mu}m contacts was obtained at 275 deg. C. The addition of ammonia to TEMAT lowered the resistivity of as-deposited Ti N film to {approx}800{mu}{Omega}-cm from 3500{approx}6000{mu}{Omega}-cm and improved the stability of Ti N film in air. Examination of the films by Auger electron spectroscopy(AES) showed that the oxygen and carbon contents decreased with the addition of ammonia. However, increasing ammonia flow rate decreased the bottom coverage of Ti N films over 0.5{mu}m contacts, probably due to the high sticking coefficient of intermediate species produced from the gas phase reaction of TEMAT and ammonia. Based on the byproduct gases detected by the quadrupole mass spectrometer (QMS), the transamination reaction was proposed to be responsible for Ti N deposition. In addition, XPS analysis revealed that the carbon in the films made from TEMAT and ammonia was metallic carbon, suggesting that {beta}-hydrogen activation process occurs competitively with the transamination reaction. (author). 11 refs., 10 figs.}
journal = []
issue = {3}
volume = {9}
journal type = {AC}
place = {Korea, Republic of}
year = {1999}
month = {Mar}
}