Abstract
Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4
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Takahisa, K;
Kojima, T;
Nakamura, K;
Koyanagi, T;
Yanagisawa, T
[1]
- Electrotechnical Laboratory, Tsukuba (Japan)
Citation Formats
Takahisa, K, Kojima, T, Nakamura, K, Koyanagi, T, and Yanagisawa, T.
Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei.
Japan: N. p.,
1997.
Web.
Takahisa, K, Kojima, T, Nakamura, K, Koyanagi, T, & Yanagisawa, T.
Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei.
Japan.
Takahisa, K, Kojima, T, Nakamura, K, Koyanagi, T, and Yanagisawa, T.
1997.
"Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei."
Japan.
@misc{etde_366086,
title = {Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei}
author = {Takahisa, K, Kojima, T, Nakamura, K, Koyanagi, T, and Yanagisawa, T}
abstractNote = {Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4 refs., 7 figs., 1 tab.}
place = {Japan}
year = {1997}
month = {Nov}
}
title = {Temperature dependence of the early degradation in a-Si solar cells; Amorphous Si taiyo denchi no shoki rekka no ondo izonsei}
author = {Takahisa, K, Kojima, T, Nakamura, K, Koyanagi, T, and Yanagisawa, T}
abstractNote = {Discussions were given on early degradation in up to about ten minutes in amorphous silicon solar cells. The experiment has used a model cell of single junction layer for power use with a Glass/ITO/P-i-n:a-Si/Al structure. Test samples were annealed at 130 degC for 30 minutes to eliminate hysteresis of degradation during storage. Xenon was used as an irradiation light source, and the temperatures were varied from 0 to 100 degC and the measurement time was set to 0.1 to 500 minutes. The result of the experiment may be summarized as follows: with regard to time-based degradation pattern for conversion efficiency, the tilt of a pattern to express degradation rate varies with temperature conditions, and changes in 10 to 20 minutes of light irradiation as a boundary; in long-term degradation after 20 minutes, the higher the environmental temperature, the lower the degradation is suppressed, but the rate of initial degradation up to about 10 minutes is higher as the higher the temperature; and the degradation rate increases as the higher the temperature in the initial degradation of about 10 minutes, whereas, corresponding to this fact, it is estimated that a phenomenon is involved, in which carrier recombination defect may increase. 4 refs., 7 figs., 1 tab.}
place = {Japan}
year = {1997}
month = {Nov}
}