Abstract
We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)
Umezu, Nobuhiko;
Fukui, Tatsuo;
Okamoto, Tsutomu;
Wada, Hiroyuki;
Tatsuki, Kouichi;
Kondo, Kenji;
Kubota, Shigeo
[1]
- Sony Corp., Tokyo (Japan)
Citation Formats
Umezu, Nobuhiko, Fukui, Tatsuo, Okamoto, Tsutomu, Wada, Hiroyuki, Tatsuki, Kouichi, Kondo, Kenji, and Kubota, Shigeo.
Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices.
Japan: N. p.,
1998.
Web.
Umezu, Nobuhiko, Fukui, Tatsuo, Okamoto, Tsutomu, Wada, Hiroyuki, Tatsuki, Kouichi, Kondo, Kenji, & Kubota, Shigeo.
Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices.
Japan.
Umezu, Nobuhiko, Fukui, Tatsuo, Okamoto, Tsutomu, Wada, Hiroyuki, Tatsuki, Kouichi, Kondo, Kenji, and Kubota, Shigeo.
1998.
"Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices."
Japan.
@misc{etde_307681,
title = {Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices}
author = {Umezu, Nobuhiko, Fukui, Tatsuo, Okamoto, Tsutomu, Wada, Hiroyuki, Tatsuki, Kouichi, Kondo, Kenji, and Kubota, Shigeo}
abstractNote = {We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)}
place = {Japan}
year = {1998}
month = {Mar}
}
title = {Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices}
author = {Umezu, Nobuhiko, Fukui, Tatsuo, Okamoto, Tsutomu, Wada, Hiroyuki, Tatsuki, Kouichi, Kondo, Kenji, and Kubota, Shigeo}
abstractNote = {We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)}
place = {Japan}
year = {1998}
month = {Mar}
}