Abstract
Titanium nitride films were deposited on the (100) oriented p-type silicon substrates by RF plasma enhanced chemical vapor deposition using a gaseous mixture of TiCl{sub 4}, N{sub 2}, H{sub 2} and Ar. The chemical composition, structure and the resistivity of the films were investigated with the deposition variables such as the flow rate ratio of N{sub 2}/TiCl{sub 4}, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N{sub 2}/TiCl{sub 4}, and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N{sub 2}/TiCl{sub 4} and deposition temperature increases within proper RF power, the Cl concentration in the films decreases and the stoichiometry and crystallinity are improved, so decreases the resistivity of the films. The films deposited under the condition of the N{sub 2}/TiCl{sub 4} ratio of 30, the RF power of 50 W and the deposition temperature of 620 degree had the Cl content of 1.5 at% and the resistivity of 56 {mu} {Omega}cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6 {mu}m 0.6 {mu}m. (author). 9 refs., 12 figs., 1 tab.
Jeon, Byung Hyuk;
Kim, Jong Seok;
Lee, Won Jong
[1]
- Korea Advanced Energy Research Inst., Daeduk-Danji (Korea, Republic of). Korea Nuclear Safety Center
Citation Formats
Jeon, Byung Hyuk, Kim, Jong Seok, and Lee, Won Jong.
Composition, structure and resistivity of Ti-N thin films deposited by RF PECVD.
Korea, Republic of: N. p.,
1995.
Web.
Jeon, Byung Hyuk, Kim, Jong Seok, & Lee, Won Jong.
Composition, structure and resistivity of Ti-N thin films deposited by RF PECVD.
Korea, Republic of.
Jeon, Byung Hyuk, Kim, Jong Seok, and Lee, Won Jong.
1995.
"Composition, structure and resistivity of Ti-N thin films deposited by RF PECVD."
Korea, Republic of.
@misc{etde_268658,
title = {Composition, structure and resistivity of Ti-N thin films deposited by RF PECVD}
author = {Jeon, Byung Hyuk, Kim, Jong Seok, and Lee, Won Jong}
abstractNote = {Titanium nitride films were deposited on the (100) oriented p-type silicon substrates by RF plasma enhanced chemical vapor deposition using a gaseous mixture of TiCl{sub 4}, N{sub 2}, H{sub 2} and Ar. The chemical composition, structure and the resistivity of the films were investigated with the deposition variables such as the flow rate ratio of N{sub 2}/TiCl{sub 4}, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N{sub 2}/TiCl{sub 4}, and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N{sub 2}/TiCl{sub 4} and deposition temperature increases within proper RF power, the Cl concentration in the films decreases and the stoichiometry and crystallinity are improved, so decreases the resistivity of the films. The films deposited under the condition of the N{sub 2}/TiCl{sub 4} ratio of 30, the RF power of 50 W and the deposition temperature of 620 degree had the Cl content of 1.5 at% and the resistivity of 56 {mu} {Omega}cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6 {mu}m 0.6 {mu}m. (author). 9 refs., 12 figs., 1 tab.}
journal = []
issue = {5}
volume = {5}
journal type = {AC}
place = {Korea, Republic of}
year = {1995}
month = {Aug}
}
title = {Composition, structure and resistivity of Ti-N thin films deposited by RF PECVD}
author = {Jeon, Byung Hyuk, Kim, Jong Seok, and Lee, Won Jong}
abstractNote = {Titanium nitride films were deposited on the (100) oriented p-type silicon substrates by RF plasma enhanced chemical vapor deposition using a gaseous mixture of TiCl{sub 4}, N{sub 2}, H{sub 2} and Ar. The chemical composition, structure and the resistivity of the films were investigated with the deposition variables such as the flow rate ratio of N{sub 2}/TiCl{sub 4}, the deposition temperature and the RF power. The deposition rate increases with increasing the flow rate ratio of N{sub 2}/TiCl{sub 4}, and RF power, while the rate decreases with increasing the deposition temperature. As the flow rate ratio of N{sub 2}/TiCl{sub 4} and deposition temperature increases within proper RF power, the Cl concentration in the films decreases and the stoichiometry and crystallinity are improved, so decreases the resistivity of the films. The films deposited under the condition of the N{sub 2}/TiCl{sub 4} ratio of 30, the RF power of 50 W and the deposition temperature of 620 degree had the Cl content of 1.5 at% and the resistivity of 56 {mu} {Omega}cm. Also, the bottom coverage of the films was above 60% on the step with the width and depth of 0.6 {mu}m 0.6 {mu}m. (author). 9 refs., 12 figs., 1 tab.}
journal = []
issue = {5}
volume = {5}
journal type = {AC}
place = {Korea, Republic of}
year = {1995}
month = {Aug}
}