Abstract
TiO{sub 2} thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO{sub 2} ALD using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] as a precursor is self-controlled at temperatures of 100-300 .deg. C. At the growth temperatures below 300 .deg. C, the surface morphology of the TiO{sub 2} films is smooth and uniform. The TiO{sub 2} film was grown with a preferred orientation toward the [101] direction at 400 .deg. C.
Lee, Jae P.;
Park, Mi H.;
Sung, Myung M.;
[1]
Chung, Taek Mo;
Kim, Yun Soo
[2]
- Kookmin University, Seoul (Korea, Republic of)
- Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of)
Citation Formats
Lee, Jae P., Park, Mi H., Sung, Myung M., Chung, Taek Mo, and Kim, Yun Soo.
Atomic Layer Deposition of TiO{sub 2} Thin Films from Ti(O{sup i}Pr){sub 2}(dmae){sub 2} and H{sub 2}O.
Korea, Republic of: N. p.,
2004.
Web.
Lee, Jae P., Park, Mi H., Sung, Myung M., Chung, Taek Mo, & Kim, Yun Soo.
Atomic Layer Deposition of TiO{sub 2} Thin Films from Ti(O{sup i}Pr){sub 2}(dmae){sub 2} and H{sub 2}O.
Korea, Republic of.
Lee, Jae P., Park, Mi H., Sung, Myung M., Chung, Taek Mo, and Kim, Yun Soo.
2004.
"Atomic Layer Deposition of TiO{sub 2} Thin Films from Ti(O{sup i}Pr){sub 2}(dmae){sub 2} and H{sub 2}O."
Korea, Republic of.
@misc{etde_22543500,
title = {Atomic Layer Deposition of TiO{sub 2} Thin Films from Ti(O{sup i}Pr){sub 2}(dmae){sub 2} and H{sub 2}O}
author = {Lee, Jae P., Park, Mi H., Sung, Myung M., Chung, Taek Mo, and Kim, Yun Soo}
abstractNote = {TiO{sub 2} thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO{sub 2} ALD using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] as a precursor is self-controlled at temperatures of 100-300 .deg. C. At the growth temperatures below 300 .deg. C, the surface morphology of the TiO{sub 2} films is smooth and uniform. The TiO{sub 2} film was grown with a preferred orientation toward the [101] direction at 400 .deg. C.}
journal = []
issue = {4}
volume = {25}
journal type = {AC}
place = {Korea, Republic of}
year = {2004}
month = {Apr}
}
title = {Atomic Layer Deposition of TiO{sub 2} Thin Films from Ti(O{sup i}Pr){sub 2}(dmae){sub 2} and H{sub 2}O}
author = {Lee, Jae P., Park, Mi H., Sung, Myung M., Chung, Taek Mo, and Kim, Yun Soo}
abstractNote = {TiO{sub 2} thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO{sub 2} ALD using [Ti(OPr{sup i}){sub 2}(dmae){sub 2}] as a precursor is self-controlled at temperatures of 100-300 .deg. C. At the growth temperatures below 300 .deg. C, the surface morphology of the TiO{sub 2} films is smooth and uniform. The TiO{sub 2} film was grown with a preferred orientation toward the [101] direction at 400 .deg. C.}
journal = []
issue = {4}
volume = {25}
journal type = {AC}
place = {Korea, Republic of}
year = {2004}
month = {Apr}
}