Abstract
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.
Putkonen, Matti;
[1]
Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)];
Bosund, Markus;
[2]
Ylivaara, Oili M.E.;
Puurunen, Riikka L.;
Kilpi, Lauri;
Ronkainen, Helena;
[1]
Sintonen, Sakari;
Ali, Saima;
Lipsanen, Harri;
[3]
Liu, Xuwen;
Haimi, Eero;
Hannula, Simo-Pekka;
[4]
Sajavaara, Timo;
[5]
Buchanan, Iain;
Karwacki, Eugene;
[6]
Vähä-Nissi, Mika
[1]
- VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, Espoo (Finland)
- Beneq Oy, Ensimmäinen savu, FI-01510, Vantaa (Finland)
- Aalto University School of Electrical Engineering, Department of Micro- and Nanosciences, P.O. Box 13500, FI-00076 Espoo (Finland)
- Aalto University School of Chemical Technology, Department of Materials Science and Engineering, P.O. Box 16200, FI-00076 Espoo (Finland)
- University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland)
- Air Products and Chemicals Inc., 7201 Hamilton Blvd., Allentown, PA 18195 (United States)
Citation Formats
Putkonen, Matti, Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)], Bosund, Markus, Ylivaara, Oili M.E., Puurunen, Riikka L., Kilpi, Lauri, Ronkainen, Helena, Sintonen, Sakari, Ali, Saima, Lipsanen, Harri, Liu, Xuwen, Haimi, Eero, Hannula, Simo-Pekka, Sajavaara, Timo, Buchanan, Iain, Karwacki, Eugene, and Vähä-Nissi, Mika.
Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors.
Netherlands: N. p.,
2014.
Web.
doi:10.1016/J.TSF.2014.02.087.
Putkonen, Matti, Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)], Bosund, Markus, Ylivaara, Oili M.E., Puurunen, Riikka L., Kilpi, Lauri, Ronkainen, Helena, Sintonen, Sakari, Ali, Saima, Lipsanen, Harri, Liu, Xuwen, Haimi, Eero, Hannula, Simo-Pekka, Sajavaara, Timo, Buchanan, Iain, Karwacki, Eugene, & Vähä-Nissi, Mika.
Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors.
Netherlands.
https://doi.org/10.1016/J.TSF.2014.02.087
Putkonen, Matti, Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)], Bosund, Markus, Ylivaara, Oili M.E., Puurunen, Riikka L., Kilpi, Lauri, Ronkainen, Helena, Sintonen, Sakari, Ali, Saima, Lipsanen, Harri, Liu, Xuwen, Haimi, Eero, Hannula, Simo-Pekka, Sajavaara, Timo, Buchanan, Iain, Karwacki, Eugene, and Vähä-Nissi, Mika.
2014.
"Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors."
Netherlands.
https://doi.org/10.1016/J.TSF.2014.02.087.
@misc{etde_22434065,
title = {Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors}
author = {Putkonen, Matti, Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)], Bosund, Markus, Ylivaara, Oili M.E., Puurunen, Riikka L., Kilpi, Lauri, Ronkainen, Helena, Sintonen, Sakari, Ali, Saima, Lipsanen, Harri, Liu, Xuwen, Haimi, Eero, Hannula, Simo-Pekka, Sajavaara, Timo, Buchanan, Iain, Karwacki, Eugene, and Vähä-Nissi, Mika}
abstractNote = {In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.}
doi = {10.1016/J.TSF.2014.02.087}
journal = []
volume = {558}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {May}
}
title = {Thermal and plasma enhanced atomic layer deposition of SiO{sub 2} using commercial silicon precursors}
author = {Putkonen, Matti, Laboratory of Inorganic Chemistry, Aalto University School of Chemical Technology, P.O. Box 16100, FI-00076, Espoo (Finland)], Bosund, Markus, Ylivaara, Oili M.E., Puurunen, Riikka L., Kilpi, Lauri, Ronkainen, Helena, Sintonen, Sakari, Ali, Saima, Lipsanen, Harri, Liu, Xuwen, Haimi, Eero, Hannula, Simo-Pekka, Sajavaara, Timo, Buchanan, Iain, Karwacki, Eugene, and Vähä-Nissi, Mika}
abstractNote = {In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R and D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O{sub 3} as oxidant and with substrates measuring 150 × 400 mm. The SiO{sub 2} film deposition rate was greatly dependent on the precursors used, highest values being 1.5–2.0 Å/cycle at 30–200 °C for one precursor with an O{sub 2} plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures. - Highlights: • SiO{sub 2} thin film is deposited by thermal and plasma enhanced atomic layer deposition (PEALD). • We report low-temperature deposition of SiO{sub 2} even at 30 °C by PEALD. • Scaling up of the atomic layer deposition processes to industrial batch is reported. • Deposited films had low low compressive residual stress and good conformality.}
doi = {10.1016/J.TSF.2014.02.087}
journal = []
volume = {558}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {May}
}