Abstract
The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been studied using 1.25 MeV electron irradiation. When compared to literature values for single crystal silicon carbide under electron irradiation, an increase in the dose to amorphization (DTA) was observed, indicative of an increase in radiation resistance. Factors that contribute to this improvement are grain refinement, grain texture, and a high density of stacking faults (SFs) in this sample of ncSiC. To test the effect of SFs on the DTA, density functional theory simulations were conducted. It was found that SFs reduced the energy barriers for both Si interstitial migration and the rate-limiting defect recovery reaction, which may explain the increased DTA.
Jamison, Laura;
[1]
Zheng, Ming-Jie;
[2]
Shannon, Steve;
[3]
Allen, Todd;
[1]
Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)];
Morgan, Dane;
[1]
Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States);
Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)];
Szlufarska, Izabela;
[1]
Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States);
Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)]
- Materials Science Program, University of Wisconsin, Madison, WI 53706 (United States)
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States)
- Nuclear Engineering Department, North Carolina State University, Raleigh, NC 27695 (United States)
Citation Formats
Jamison, Laura, Zheng, Ming-Jie, Shannon, Steve, Allen, Todd, Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Morgan, Dane, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Szlufarska, Izabela, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), and Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)].
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation.
Netherlands: N. p.,
2014.
Web.
doi:10.1016/J.JNUCMAT.2013.11.010.
Jamison, Laura, Zheng, Ming-Jie, Shannon, Steve, Allen, Todd, Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Morgan, Dane, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Szlufarska, Izabela, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), & Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)].
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation.
Netherlands.
https://doi.org/10.1016/J.JNUCMAT.2013.11.010
Jamison, Laura, Zheng, Ming-Jie, Shannon, Steve, Allen, Todd, Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Morgan, Dane, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Szlufarska, Izabela, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), and Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)].
2014.
"Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation."
Netherlands.
https://doi.org/10.1016/J.JNUCMAT.2013.11.010.
@misc{etde_22359906,
title = {Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation}
author = {Jamison, Laura, Zheng, Ming-Jie, Shannon, Steve, Allen, Todd, Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Morgan, Dane, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Szlufarska, Izabela, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), and Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)]}
abstractNote = {The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been studied using 1.25 MeV electron irradiation. When compared to literature values for single crystal silicon carbide under electron irradiation, an increase in the dose to amorphization (DTA) was observed, indicative of an increase in radiation resistance. Factors that contribute to this improvement are grain refinement, grain texture, and a high density of stacking faults (SFs) in this sample of ncSiC. To test the effect of SFs on the DTA, density functional theory simulations were conducted. It was found that SFs reduced the energy barriers for both Si interstitial migration and the rate-limiting defect recovery reaction, which may explain the increased DTA.}
doi = {10.1016/J.JNUCMAT.2013.11.010}
journal = []
issue = {1-3}
volume = {445}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {Feb}
}
title = {Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation}
author = {Jamison, Laura, Zheng, Ming-Jie, Shannon, Steve, Allen, Todd, Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Morgan, Dane, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)], Szlufarska, Izabela, Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706 (United States), and Department of Engineering Physics, University of Wisconsin, Madison, WI 53706 (United States)]}
abstractNote = {The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been studied using 1.25 MeV electron irradiation. When compared to literature values for single crystal silicon carbide under electron irradiation, an increase in the dose to amorphization (DTA) was observed, indicative of an increase in radiation resistance. Factors that contribute to this improvement are grain refinement, grain texture, and a high density of stacking faults (SFs) in this sample of ncSiC. To test the effect of SFs on the DTA, density functional theory simulations were conducted. It was found that SFs reduced the energy barriers for both Si interstitial migration and the rate-limiting defect recovery reaction, which may explain the increased DTA.}
doi = {10.1016/J.JNUCMAT.2013.11.010}
journal = []
issue = {1-3}
volume = {445}
journal type = {AC}
place = {Netherlands}
year = {2014}
month = {Feb}
}