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ETDEWEB   /       /    Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO

Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO

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Abstract

Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors have been studied. The influence of defect complex caused by oxygen vacancy and interstitial zinc atom on the metal-insulator transition is considered. The peculiarities of this transition in ZnO films doped with donor or acceptor impurity and the influence of mentioned defect complex on the charge carrier transfer mechanism were investigated.
Authors:
Aghamalyan, N. R.; Aslanyan, T. A.; Vardanyan, E. S.; Kafadaryan, Y. A.; Hovsepyan, R. K.; Petrosyan, S. I.; Poghosyan, A. R. [1] 
  1. Institute for Physical Research NAS, Ashtarak (Armenia)
Publication Date:
Jul 01, 2012
Product Type:
Journal Article
Resource Relation:
Journal Name: Izvestiya National'noj Akademii Nauk Armenii. Fizika; Journal Volume: 47; Journal Issue: 6; Other Information: 10 refs., 4 figs.
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL-PHASE TRANSFORMATIONS; EQUIPMENT; GALLIUM; LITHIUM; SEMICONDUCTOR MATERIALS; ZINC COMPOUNDS
OSTI ID:
22283796
Country of Origin:
Armenia
Language:
Russian
Other Identifying Numbers:
Journal ID: ISSN 1025-5613; CODEN: IAAFF8; TRN: AM1400037105204
Availability:
Available from National Academy of Sciences of Armenia, also available online from: http://physics.asj-oa.am/3349/1/417.pdf
Submitting Site:
INIS
Size:
page(s) 417-426
Announcement Date:
Dec 12, 2014

Journal Article:

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Citation Formats

Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., and Poghosyan, A. R. Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO. Armenia: N. p., 2012. Web.
Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., & Poghosyan, A. R. Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO. Armenia.
Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., and Poghosyan, A. R. 2012. "Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO." Armenia.
@misc{etde_22283796,
title = {Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors; Elektronniye fazoviye perexodi metall-izolyator v shirokozonnix poluprovodnikax ZnO}
 author = {Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., and Poghosyan, A. R.}
 abstractNote = {Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors have been studied. The influence of defect complex caused by oxygen vacancy and interstitial zinc atom on the metal-insulator transition is considered. The peculiarities of this transition in ZnO films doped with donor or acceptor impurity and the influence of mentioned defect complex on the charge carrier transfer mechanism were investigated.}
 journal = []
 issue = {6}
 volume = {47}
 journal type = {AC}
 place = {Armenia}
 year = {2012}
 month = {Jul}
 }