Abstract
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
Laskar, Masihhur R.;
Nath, Digbijoy N.;
Lee, Edwin W.;
Lee, Choong Hee;
Yang, Zihao;
[1]
Ma, Lu;
Wu, Yiying;
[2]
Kent, Thomas;
[3]
Mishra, Rohan;
[4]
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)];
Roldan, Manuel A.;
[5]
Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)];
Idrobo, Juan-Carlos;
[6]
Pantelides, Sokrates T.;
[4]
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States);
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)];
Pennycook, Stephen J.;
[7]
Myers, Roberto C.;
Rajan, Siddharth;
[1]
Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)]
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Chemistry, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
Citation Formats
Laskar, Masihhur R., Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yang, Zihao, Ma, Lu, Wu, Yiying, Kent, Thomas, Mishra, Rohan, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)], Roldan, Manuel A., Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)], Idrobo, Juan-Carlos, Pantelides, Sokrates T., Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States), Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)], Pennycook, Stephen J., Myers, Roberto C., Rajan, Siddharth, and Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)].
p-type doping of MoS{sub 2} thin films using Nb.
United States: N. p.,
2014.
Web.
doi:10.1063/1.4867197.
Laskar, Masihhur R., Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yang, Zihao, Ma, Lu, Wu, Yiying, Kent, Thomas, Mishra, Rohan, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)], Roldan, Manuel A., Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)], Idrobo, Juan-Carlos, Pantelides, Sokrates T., Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States), Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)], Pennycook, Stephen J., Myers, Roberto C., Rajan, Siddharth, & Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)].
p-type doping of MoS{sub 2} thin films using Nb.
United States.
https://doi.org/10.1063/1.4867197
Laskar, Masihhur R., Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yang, Zihao, Ma, Lu, Wu, Yiying, Kent, Thomas, Mishra, Rohan, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)], Roldan, Manuel A., Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)], Idrobo, Juan-Carlos, Pantelides, Sokrates T., Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States), Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)], Pennycook, Stephen J., Myers, Roberto C., Rajan, Siddharth, and Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)].
2014.
"p-type doping of MoS{sub 2} thin films using Nb."
United States.
https://doi.org/10.1063/1.4867197.
@misc{etde_22283072,
title = {p-type doping of MoS{sub 2} thin films using Nb}
author = {Laskar, Masihhur R., Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yang, Zihao, Ma, Lu, Wu, Yiying, Kent, Thomas, Mishra, Rohan, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)], Roldan, Manuel A., Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)], Idrobo, Juan-Carlos, Pantelides, Sokrates T., Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States), Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)], Pennycook, Stephen J., Myers, Roberto C., Rajan, Siddharth, and Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)]}
abstractNote = {We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.}
doi = {10.1063/1.4867197}
journal = []
issue = {9}
volume = {104}
journal type = {AC}
place = {United States}
year = {2014}
month = {Mar}
}
title = {p-type doping of MoS{sub 2} thin films using Nb}
author = {Laskar, Masihhur R., Nath, Digbijoy N., Lee, Edwin W., Lee, Choong Hee, Yang, Zihao, Ma, Lu, Wu, Yiying, Kent, Thomas, Mishra, Rohan, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)], Roldan, Manuel A., Department Fisica Aplicada III, Universidad Complutense de Madrid, Madrid 28040 (Spain)], Idrobo, Juan-Carlos, Pantelides, Sokrates T., Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States), Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)], Pennycook, Stephen J., Myers, Roberto C., Rajan, Siddharth, and Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)]}
abstractNote = {We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited MoS{sub 2}. Niobium was found to act as an efficient acceptor up to relatively high density in MoS{sub 2} films. For a hole density of 3.1 × 10{sup 20} cm{sup −3}, Hall mobility of 8.5 cm{sup 2} V{sup −1} s{sup −1} was determined, which matches well with the theoretically expected values. X-ray diffraction scans and Raman characterization indicated that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. Scanning transmission electron microscope imaging showed ordered crystalline nature of the Nb-doped MoS{sub 2} layers stacked in the [0001] direction. This demonstration of substitutional p-doping in large area epitaxial MoS{sub 2} could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.}
doi = {10.1063/1.4867197}
journal = []
issue = {9}
volume = {104}
journal type = {AC}
place = {United States}
year = {2014}
month = {Mar}
}