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Investigations of binary and ternary phase change alloys for future memory applications

Abstract

The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In{sub 3}Sb{sub 1}Te{sub 2} and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In{sub 3}Sb{sub 1}Te{sub 2}. At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe{sub 2}. For the first time a complete description of In{sub 3}Sb{sub 1}Te{sub 2} alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge{sub 2}Sb{sub 2}Te{sub 5}/GeTe or prototype  More>>
Authors:
Publication Date:
Sep 13, 2012
Product Type:
Thesis/Dissertation
Report Number:
INIS-DE-1469
Resource Relation:
Other Information: TH: Diss. (Dr.rer.nat.)
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; AMORPHOUS STATE; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM ALLOYS; GERMANIUM TELLURIDES; INDIUM ANTIMONIDES; INDIUM TELLURIDES; LATTICE VIBRATIONS; OPTICAL PROPERTIES; PHASE CHANGE MATERIALS; STOICHIOMETRY; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TERNARY ALLOY SYSTEMS; TIN ALLOYS; TIN TELLURIDES; VACANCIES; X-RAY DIFFRACTION; X-RAY SPECTRA
OSTI ID:
22175895
Research Organizations:
RWTH Aachen Univ. (Germany). Fakultaet fuer Mathematik, Informatik und Naturwissenschaften
Country of Origin:
Germany
Language:
English
Other Identifying Numbers:
TRN: DE13F9817
Availability:
Commercial reproduction prohibited. Available from ETDE as OSTI ID: 22175895;
Submitting Site:
DEN
Size:
206 page(s)
Announcement Date:
Dec 19, 2013

Citation Formats

Rausch, Pascal. Investigations of binary and ternary phase change alloys for future memory applications. Germany: N. p., 2012. Web.
Rausch, Pascal. Investigations of binary and ternary phase change alloys for future memory applications. Germany.
Rausch, Pascal. 2012. "Investigations of binary and ternary phase change alloys for future memory applications." Germany.
@misc{etde_22175895,
title = {Investigations of binary and ternary phase change alloys for future memory applications}
author = {Rausch, Pascal}
abstractNote = {The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In{sub 3}Sb{sub 1}Te{sub 2} and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In{sub 3}Sb{sub 1}Te{sub 2}. At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe{sub 2}. For the first time a complete description of In{sub 3}Sb{sub 1}Te{sub 2} alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge{sub 2}Sb{sub 2}Te{sub 5}/GeTe or prototype systems like AgInTe{sub 2} and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge{sub 3}Sn{sub 1}Te{sub 4} to Ge{sub 2}Sn{sub 2}Te{sub 4}. These alloys are investigated with respect to constraint theory.}
place = {Germany}
year = {2012}
month = {Sep}
}