You need JavaScript to view this

Preparation and characterization of vanadium oxide thin films

Abstract

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)
Authors:
Monfort, O.; Plesch, G.; [1]  Roch, T. [2] 
  1. Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia)
  2. Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)
Publication Date:
Apr 16, 2013
Product Type:
Conference
Report Number:
INIS-SK-2013-020
Resource Relation:
Conference: Student Scientific Conference PriF UK 2013, Studentska vedecka konferencia PriF UK 2012, Bratislava (Slovakia), 24 Apr 2013; Other Information: 2 tabs., 6 figs., 7 refs.; Related Information: In: Student Scientific Conference PriF UK 2013. Proceedings of reviewed contributions| by Galambos, M. (ed.) [Department of Nuclear Chemistry, Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia)]; Dzugasova, V. (ed.); Sevcovicova, A. (eds.) [Department of Genetics, Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia)]| 1756 p.
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; ANNEALING; CHEMISTRY; ENERGY ANALYSIS; EXPERIMENTAL DATA; LAYERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SILICONES; SOL-GEL PROCESS; THIN FILMS; VANADIUM OXIDES; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
OSTI ID:
22122204
Research Organizations:
Faculty of Natural Sciences, Comenius University, Bratislava (Slovakia)
Country of Origin:
Slovakia
Language:
English
Contract Number:
Projects VEGA-1/0605/12 and APVV-0199-10
Other Identifying Numbers:
Other: ISBN 978-80-223-3392-4; TRN: SK13K0218078316
Availability:
Available from INIS in electronic form. Also available from http://2013.svkprifuk.info/zbornik/zbornik2013.pdf
Submitting Site:
INIS
Size:
page(s) 1106-1111
Announcement Date:
Aug 29, 2013

Citation Formats

Monfort, O., Plesch, G., and Roch, T. Preparation and characterization of vanadium oxide thin films. Slovakia: N. p., 2013. Web.
Monfort, O., Plesch, G., & Roch, T. Preparation and characterization of vanadium oxide thin films. Slovakia.
Monfort, O., Plesch, G., and Roch, T. 2013. "Preparation and characterization of vanadium oxide thin films." Slovakia.
@misc{etde_22122204,
title = {Preparation and characterization of vanadium oxide thin films}
author = {Monfort, O., Plesch, G., and Roch, T.}
abstractNote = {The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)}
place = {Slovakia}
year = {2013}
month = {Apr}
}