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Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores

Conference:

Abstract

Based on the assumption that the noise contribution of a semiconductor detector is due solely to its bulk properties, equations are presented which indicate the theoretical limits of noise in detectoramplifier combinations. These equations show that an optimum amplifier time-constant and detector bias voltage exist for which condition the minimum noise is independent of the semiconductor resistivity. The optimum performance of a detector-amplifier system is shown to depend only upon detector area, input capacity (less detector capacity), semiconductor minority carrier lifetime and the transconductance of the amplifier input tube. A new detector structure which includes a guard-ring electrode as an integral part of the detector structure is described which has the effect of largely eliminating noise due to surface leakage. Experimental results for detector leakage and energy resolution which agree well with theory are presented. The theoretical limit of noise, expressed as full width at half maximum, is from 7 to 10 keV for 1-cm{sup 2} p-type silicon detectors at 25{sup o}C. (author) [French] Partant de l'hypothese que le bruit imputable au detecteur a semi-conducteur est du exclusivement aux proprietes fondamentales du semi-conducteur, les auteurs etablissent des equations donnant les limites theoriques du bruit dans les combinaisons detecteur-amplificateur. Ces equations  More>>
Authors:
Hansen, W L; Goulding, F S [1] 
  1. Lawrence Radiation Laboratory, University of California, Berkeley, CA (United States)
Publication Date:
Apr 15, 1962
Product Type:
Conference
Resource Relation:
Conference: Conference on Nuclear Electronics, Belgrade, Yugoslavia (Serbia), 15-20 May 1961; Other Information: 7 figs, 2 tabs, 2 refs; Related Information: In: Nuclear Electronics I. Proceedings of the Conference on Nuclear Electronics. Vol. I| 611 p.
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLIFIERS; CARRIER LIFETIME; CHARGED PARTICLE DETECTION; ELECTRIC POTENTIAL; ELECTRODES; ENERGY RESOLUTION; EQUATIONS; KEV RANGE; LEAKS; NOISE; SEMICONDUCTOR DETECTORS; SURFACES
OSTI ID:
22028357
Research Organizations:
International Atomic Energy Agency, Vienna (Austria)
Country of Origin:
IAEA
Language:
English
Other Identifying Numbers:
Other: ISSN 0074-1884; TRN: XA12N1980116623
Submitting Site:
INIS
Size:
page(s) 583-590
Announcement Date:
Jan 24, 2013

Conference:

Citation Formats

Hansen, W L, and Goulding, F S. Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores. IAEA: N. p., 1962. Web.
Hansen, W L, & Goulding, F S. Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores. IAEA.
Hansen, W L, and Goulding, F S. 1962. "Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores." IAEA.
@misc{etde_22028357,
title = {Electrical limitations to energy resolution in semiconductor particle detectors; Limitations electriques du pouvoir de resolution en energie des detecteurs a semi-conducteurs; Ehlektricheskie ogranicheniya razreshayushchej sposobnosti po ehnergii v poluprovodnikovykh detektorakh chastits; Limitaciones electricas en la resolucion energetica de detectores de particulas a base de semiconductores}
author = {Hansen, W L, and Goulding, F S}
abstractNote = {Based on the assumption that the noise contribution of a semiconductor detector is due solely to its bulk properties, equations are presented which indicate the theoretical limits of noise in detectoramplifier combinations. These equations show that an optimum amplifier time-constant and detector bias voltage exist for which condition the minimum noise is independent of the semiconductor resistivity. The optimum performance of a detector-amplifier system is shown to depend only upon detector area, input capacity (less detector capacity), semiconductor minority carrier lifetime and the transconductance of the amplifier input tube. A new detector structure which includes a guard-ring electrode as an integral part of the detector structure is described which has the effect of largely eliminating noise due to surface leakage. Experimental results for detector leakage and energy resolution which agree well with theory are presented. The theoretical limit of noise, expressed as full width at half maximum, is from 7 to 10 keV for 1-cm{sup 2} p-type silicon detectors at 25{sup o}C. (author) [French] Partant de l'hypothese que le bruit imputable au detecteur a semi-conducteur est du exclusivement aux proprietes fondamentales du semi-conducteur, les auteurs etablissent des equations donnant les limites theoriques du bruit dans les combinaisons detecteur-amplificateur. Ces equations montrent qu'il existe une constante de temps optimum de l'amplificateur et une tension de polarisation du detecteur, pour lesquelles le bruit minimum est independant de la resistivite du semi-conducteur. Les auteurs prouvent que l'optimum de fonctionnement d'un ensemble detecteur-amplificateur ne depend que de la surface du detecteur, de la capacite a l'entree (deduction faite de la capacite du detecteur), du porteur minoritaire du semi-conducteur, de la duree de vie et de la transconductance du tube d'entree de l'amplificateur. Ils decrivent un modele nouveau de detecteur qui comprend une electrode avec anneau de garde qui fait partie integrante de l'instrument et qui a pour effet d'eliminer dans une large mesure le bruit du aux fuites en surface. Le memoire fournit des donnees experimentales relatives aux fuites et au pouvoir de resolution en energie qui concordent parfaitement avec la theorie. La limite theorique du bruit, exprimee en largeur totale a mi-hauteur du maximum, est de l'ordre de 7 a 10keV pour les detecteurs au silicium type p de 1 cm{sup 2}, a une temperature de 25{sup o}C. (author) [Spanish] Los autores parten de la suposicion de que el ruido de fondo de un detector basado en un semiconductor se debe unicamente a este ultimo, y presentan ecuaciones que indican los limites teoricos del ruido en las combinaciones detector-amplificador. Estas ecuaciones demuestran la existencia de valores optimos en las constantes de tiempo del amplificador y en la polarizacion del detector, para los que el ruido minimo es independiente de la resistividad del semiconductor. Los autores demuestran que el funcionamiento optimo de un sistema detectoramplificador depende unicamente del area del detector, de la capacidad de entrada (menos la capacidad del detector), de la vida media de los portadores minoritarios del semiconductor, y de la transconductancia de la valvula de entrada del amplificador. La memoria describe la estructura de un nuevo detector que incluye como parte integral un electrodo de anillo de guarda cuyo efecto es eliminar en gran parte el ruido que ocasionan las fugas superficiales. Presentan los resultados obtenidos experimentalmente para las perdidas en el detector y la resolucion energetica, que concuerdan satisfactoriamente con los valores teoricos. El limite teorico del ruido expresado como anchura del pico a la mitad de su amplitud esta comprendido entre 7 y 10keV para detectores de silicio del tipo p, de 1 cm{sup 2} a 25{sup o}C. (author) [Russian] Iskhodya iz gipotezy, chto proizvodimyj poluprovodnikovym detektorom shum vyzyvaetsya isklyuchitel'no svojstvami massy poluprovodnika, privodyatsya uravneniya, dayushchie teoreticheskie predely shuma pri sovmeshchenii detektorov s usilitelyami. Iz ehtikh uravnenij vidno, chto imeyutsya optimal'naya konstanta vremeni dlya usilitelya i napryazhenie smeshcheniya dlya detektora; pri soblyudenii ehtikh uslovij minimal'nyj shum ne zavisit ot udel'nogo soprotivleniya poluprovodnika. Dokazyvaetsya, chto nailuchshie rezul'taty raboty sistemy detektor-usilitel' zavisyat tol'ko ot ploshchadi detektiruyushchej poverkhnosti, vkhodnoj emkosti (za vychetom emkosti samogo detektora), sroka zhizni naimenee mnogochislennogo iz nositelej v poluprovodnike i ot krutizny vkhodnoj ehlektronnoj lampy usilitelya. Opisyvaetsya novaya konstruktsiya detektora s kol'tsevym ograditel'nym ehlektrodom v kachestve neot{sup e}mlemoj chasti konstruktsii detektora, chto v shirokoj mere ustranyaet shum, vyzyvaemyj poverkhnostnoj utechkoj. Soobshchayutsya ehksperimental'nye rezul'taty opredeleniya utechki detektora i razreshayushchej sposobnosti po ehnergii, khorosho sovpadayushchie s teoreticheskimi dannymi. Teoreticheskij predel shuma, vyrazhennogo v vide polnoj shiriny na polovine maksimuma, lezhit dlya kremnievykh detektorov tipa ''p'' v intervale ot 7 do 10 kev na 1 kv.cm pri 25{sup o}C. (author)}
place = {IAEA}
year = {1962}
month = {Apr}
}