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Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas

Conference:

Abstract

An account is given of experience gained at the CENS on the detection of nuclear particles by semiconductors. One type of detector, of pin structure, has been specially studied. In comparison with the usual p-n or npp{sup +} structures, and given an equal purity of the base material, it has the advantage of permitting a larger effective volume for the following reasons: (a) with an equal potential difference applied to the crystal, the total thickness of the barrier layers is greater; (b) with an equal reverse current, the maximum potential difference which they can withstand is greater; (c) other things being equal, their capacitance per unit of area is smaller and hence the permitted maximum surface is greater. A detailed description is given of methods of obtaining pin structures in silicon, the intermediate zone reaching 1 mm. Lastly, certain applications of these detectors are described: {alpha} and {gamma} spectroscopy and the measurement of dE/dX for relativistic particles. (author) [French] Les auteurs exposent l'experience acquise au CENS sur la detection des particules nucleaires par les semi-conducteurs. Un type de detecteur, de structure pin, a ete particulierement etudie. U presente par rapport aux structures classiques pn ou npp{sup +}, et a purete  More>>
Authors:
Koch, L; Messier, J; Valin, J [1] 
  1. Centre d'Etudes Nucleaires de Saclay (France)
Publication Date:
Apr 15, 1962
Product Type:
Conference
Resource Relation:
Conference: Conference on Nuclear Electronics, Belgrade, Yugoslavia (Serbia), 15-20 May 1961; Other Information: 8 figs, 1 tab., 10 refs; Related Information: In: Nuclear Electronics I. Proceedings of the Conference on Nuclear Electronics. Vol. I| 611 p.
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CAPACITANCE; COMPARATIVE EVALUATIONS; CRYSTALS; DETECTION; GAMMA SPECTROSCOPY; PARTICLE PROPERTIES; PARTICLES; P-N JUNCTIONS; RELATIVISTIC RANGE; SEMICONDUCTOR MATERIALS; SILICON
OSTI ID:
22028347
Research Organizations:
International Atomic Energy Agency, Vienna (Austria)
Country of Origin:
IAEA
Language:
French
Other Identifying Numbers:
Other: ISSN 0074-1884; TRN: XA12N1970116613
Submitting Site:
INIS
Size:
page(s) 465-475
Announcement Date:
Jan 18, 2013

Conference:

Citation Formats

Koch, L, Messier, J, and Valin, J. Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas. IAEA: N. p., 1962. Web.
Koch, L, Messier, J, & Valin, J. Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas. IAEA.
Koch, L, Messier, J, and Valin, J. 1962. "Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas." IAEA.
@misc{etde_22028347,
title = {Properties of silicium n-i-p junctions - application to the detection of relativist particles; Propriete des jonctions nip de silicium - Application a la detection des particules relativistes; Svojstva perekhoda p-i-n v kremnii - primenenie k obnaruzheniyu relyativistskikh chastits; Propiedades de estructuras nip de silicio - Aplicacion a la deteccion de particulas relativistas}
author = {Koch, L, Messier, J, and Valin, J}
abstractNote = {An account is given of experience gained at the CENS on the detection of nuclear particles by semiconductors. One type of detector, of pin structure, has been specially studied. In comparison with the usual p-n or npp{sup +} structures, and given an equal purity of the base material, it has the advantage of permitting a larger effective volume for the following reasons: (a) with an equal potential difference applied to the crystal, the total thickness of the barrier layers is greater; (b) with an equal reverse current, the maximum potential difference which they can withstand is greater; (c) other things being equal, their capacitance per unit of area is smaller and hence the permitted maximum surface is greater. A detailed description is given of methods of obtaining pin structures in silicon, the intermediate zone reaching 1 mm. Lastly, certain applications of these detectors are described: {alpha} and {gamma} spectroscopy and the measurement of dE/dX for relativistic particles. (author) [French] Les auteurs exposent l'experience acquise au CENS sur la detection des particules nucleaires par les semi-conducteurs. Un type de detecteur, de structure pin, a ete particulierement etudie. U presente par rapport aux structures classiques pn ou npp{sup +}, et a purete egale du materiau de depart, l'avantage de permettre un volume sensible plus grand. En effet: a) a difference de potentiel egale appliquee au cristal, l'epaisseur totale des barrieres est plus importante; b) a courant inverse egal, la d.d.p. maximum qu'ils supportent est plus grande; c) toutes choses egales d'ailleurs, leur capacite par unite d'aire est plus faible et la surface maximum permise est donc plus grande. Les auteurs decrivent en detail quelques procedes permettant d'obtenir des structures pin dans le silicium, la zone intermediaire atteignant 1 mm. Enfin, ils decrivent quelques applications de ces detecteurs: spectroscopie {alpha} et {gamma}, mesure de dE/dX pour les particules relativistes. (author) [Spanish] Los autores describen la experiencia adquirida en el CENS, en lo que se refiere a la deteccion de particulas nucleares por medio de semiconductores. Han estudiado especialmente cierto tipo de detector, de estructura pin. Suponiendo que se trabaje con materiales de igual pureza inicial, este dispositivo presenta, con respecto a los aparatos de estructura corriente pn o npp{sup +}, la ventaja de poseer un mayor volumen sensible. En efecto: a) a igual diferencia de potencial aplicada al cristal, el espesor total de las barreras es mayor; b) a igualdad de la corriente inversa, la maxima diferencia de potencial que admiten es mayor; c) siendo iguales todas las demas condiciones, su capacidad por unidad de superficie es menor y la maxima superficie admisible es, pues, mas elevada. Los autores describen detalladamente ciertos procedimientos que permiten obtener estructuras pin en el silicio, con un espesor de zona intermedia que alcanza a 1 mm. Finalmente, describen algunas aplicaciones de estos detectores, tales como la espectroscopia {alpha} y {gamma}, y la medida de dE/dX en el caso de las particulas relativistas. (author) [Russian] V dannoj rabote govoritsya ob opyte, provedennom v TSentre yadernykh issledovanij v Sakle, v oblasti obnaruzheniya yadernykh chastits s pomoshch'yu poluprovodnikov. V chastnosti, izuchalsya tip detektora s perekhodom p-i-n. Po sravneniyu s obychnymi perekhodami p-n ili npp{sup +} i pri uslovii ravnoj chistoty iskhodnogo materiala, ehtot perekhod imeet preimushchestvo, zaklyuchayushcheesya v bolee vysokoj chuvstvitel'nosti ; dejstvitel'no: 1) pri ravnoj raznosti potentsialov, prilozhennoj k kristallu, samym vazhnym yavlyaetsya obshchaya tolshchina bar'erov; 2) pri ravnom obratnom toke maksimal'naya raznost' potentsialov, kotoruyu oni vyderzhivayut, bolee vysoka; 3) pri drugikh ravnykh velichinakh ikh emkost' na edinitsu poverkhnosti nizhe, a maksimal'no dopustimaya poverkhnost' vyshe. V rabote podrobno opisyvayutsya nekotorye metody, pozvolyayushchie poluchit' perekhod p-i-n v kremnii s promezhutochnoj zonoj v 1 mm. Nakonets, budut opisany nekotorye vidy primeneniya ehtikh detektorov: al'fa- i gamma-spektroskopiya, izmerenie dE/dX dlya relyativistskikh chastits. (author)}
place = {IAEA}
year = {1962}
month = {Apr}
}